Multibit memories using a structure of SiO2/partially oxidized amorphous Si/HfO2

Applied Physics Letters

Volumn 89, Issue 3, 2006, Pages

  Park, Sangjin ^a   Cha, Young Kwan ^a   Cha, Daigil ^a   Park, Youngsoo ^a   Yoo, In Kyeong ^a   Lee, Jung Hyun ^a   Seol, Kwang Soo ^a   Choi, Suk Ho ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC POTENTIAL; MOLECULAR STRUCTURE; OXIDATION; SILICA;

CHARGE MEMORY; ELECTRON-TRAP CENTERS; MEMORY CAPACITORS; SEQUENTIAL PROCESSES;

CAPACITORS;

EID: 33746293228     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219999     Document Type: Article

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