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Journal of Materials Science

Volumn 44, Issue 19, 2009, Pages 5375-5382

Heterolayered PZT thin films of different thicknesses and stacking sequence

(3) Kartawidjaja, F C a Sim, C H a Wang, J a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; DIELECTRIC BEHAVIOR; DIELECTRIC PERFORMANCE; ELECTRICAL PROPERTY; GRAIN SIZE; LARGE-GRAIN; PEROVSKITE PHASE; PREFERRED ORIENTATIONS; PZT; PZT FILM; PZT THIN FILM; RAYLEIGH LAW; RELATIVE PERMITTIVITY; REMANENT POLARIZATION; STACKING SEQUENCE; SWITCHING FIELD; THICKNESS DEPENDENCE;

DOMAIN WALLS; ELECTRIC PROPERTIES; FERROELECTRICITY; GRAIN SIZE AND SHAPE; OXIDE MINERALS; PEROVSKITE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS;

FERROELECTRIC FILMS;

EID: 68949173933 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-009-3569-6 Document Type: Article

Times cited : (8)

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