Ferroelectric and dielectric behavior of heterolayered PZT thin films

Journal of Applied Physics

Volumn 102, Issue 12, 2007, Pages

  Kartawidjaja, F C ^a   Sim, C H ^a   Wang, J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC PROPERTIES; LEAD; LEAKAGE CURRENTS; MICROSTRUCTURE; OXYGEN VACANCIES;

DENSE MICROSTRUCTURE; HETEROLAYERED FILMS;

THIN FILMS;

EID: 37549065884     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822472     Document Type: Article

References (25)

1. D. L. Shi, Functional Thin Films and Functional Materials (Springer, New York, 2001).
2. C. A. Araujo, L. D. McMillan, B. M. Melnick, J. D. Chuchiaro, and J. F. Scott, Ferroelectrics 104, 241 (1990).
3. K. Aoki, Y. Fukuda, K. Numata, and A. Nishimura, Jpn. J. Appl. Phys., Part 1 35, 2210 (1996).
4. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett. 65, 1522 (1994).
5. K. H. Yoon, J. H. Shin, J. H. Park, and D. H. Kang, J. Appl. Phys. 83, 3626 (1998).
6. H. N. Al-Shareef, K. R. Bellur, A. I. Kingon, and O. Auciello, Appl. Phys. Lett. 66, 239 (1995).
7. L. Wang, J. Yu, Y. Wang, and J. Gao, J. Mater. Sci. 17, 509 (2006).
8. F. Li, Z. H. Zhou, and J. Wang, J. Appl. Phys. 100, 034106 (2006).
9. Z. H. Zhou, J. M. Xue, W. Z. Li, and J. Wang, J. Appl. Phys. 96, 5706 (2004).
10. S. G. Lee, I. G. Park, S. G. Bae, and Y. H. Lee, Jpn. J. Appl. Phys., Part 1 36, 6880 (1997).
11. J. G. Wu, D. Q. Xiao, J. G. Zhu, J. L. Zhu, J. Z. Tan, and Q. L. Zhang, Appl. Phys. Lett. 90, 082902 (2007).
12. F. C. Kartawidjaja, Z. H. Zhou, and J. Wang, J. Electroceram. 16, 425 (2006).
13. C. Hofer, S. Halder, and R. Waser, Ferroelectrics 332, 153 (2006).
14. T. Hase, T. Sakuma, Y. Miyasaka, K. Hirata, and N. Hosokawa, Jpn. J. Appl. Phys., Part 1 32, 4061 (1993).
15. J. J. Lee, C. L. Thio, and S. B. Desu, J. Appl. Phys. 78, 5073 (1995).
16. M. Dawber and J. F. Scott, Integr. Ferroelectr. 38, 161 (2001).
17. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1979).
18. A. K. Tagantsev, Cz. Pawlaczyk, K. Brooks, and N. Setter, Integr. Ferroelectr. 4, 1 (1994).
19. E. M. Alkoy, K. Uchiyama, T. Shiosaki, and S. Alkoy, J. Appl. Phys. 99, 106106 (2006).
20. S. Alkoy, E. M. Alkoy, K. Uchiyama, and T. Shiosaki, Jpn. J. Appl. Phys., Part 1 45, 7275 (2006).
21. D. Damjanovic, J. Appl. Phys. 82, 1788 (1997).
22. D. V. Taylor and D. Damjanovic, J. Appl. Phys. 82, 1973 (1997).
23. D. V. Taylor and D. Damjanovic, Appl. Phys. Lett. 73, 2045 (1998).
24. T. Mihara, H. Watanabe, and C. A. Araujo, Jpn. J. Appl. Phys., Part 1 33, 3996 (1994).
25. T. Mihara, H. Watanabe, and C. A. Araujo, Jpn. J. Appl. Phys., Part 1 33, 5281 (1994).