Heterolayered lead zirconate titanate thin films of giant polarization

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5706-5711

  Zhou, Z H ^a   Xue, J M ^a   Li, W Z ^a   Wang, J ^a   Zhu, H ^b   Miao, J M ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DIELECTRIC FILMS; ELECTRIC FIELDS; LEAD COMPOUNDS; MICROELECTROMECHANICAL DEVICES; PERMITTIVITY; POLARIZATION; POLYCRYSTALLINE MATERIALS; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

GIANT POLARIZATION; LEAD ZIRCONATE TITANATE (PZT) THIN FILM; PINNING MECHANISM; SUBSWITCHING FIELDS;

FERROELECTRIC THIN FILMS;

EID: 9944225241     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803921     Document Type: Article

References (24)

1. J. F. Scott, and C. A. Araujo, Science 246, 1400 (1989).
2. B. Jaffe, W. R. Cook, and H. Jaffe, Piezoelectric Ceramics (Academic, New York, 1971).
3. Q. Zou, H. E. Ruda, and B. G. Yacobi, Appl. Phys. Lett. 78, 1282 (2001).
4. J. Wang et al., Science 299, 1719 (2003).
5. C. V. R. V. Kumar, R. Pascual, and M. Sayer, J. Appl. Phys. 71, 864 (1992).
6. C. H. Lin, P. A. Friddle, C. H. Ma, A. Daga. and H. Chen, J. Appl. Phys. 90, 1509 (2001).
7. T. Kumazama, Y. Kumagai, H. Miura, and M. Kitano, Appl. Phys. Lett. 72, 608 (1998).
8. O. Lohse, M. Grossmann, U. Boettger, and D. Bolten, J. Appl. Phys. 89, 2332 (2001).
9. F. Yan, Y. Wang, H. L. W. Chan, and C. L. Choy, Appl. Phys. Lett. 82, 4325 (2003).
10. Y. Sakashita, T. Ono, H. Segawa, K. Tominaga, and M. Okada, J. Appl. Phys. 69, 8352 (1991).
11. I. Kanno, S. Hayashi, R. Takayama, and T. Hirao, Appl. Phys. Lett. 68, 328 (1996).
12. Q. Zou, H. E. Ruda, and B. G. Yacobi, Appl. Phys. Lett. 78. 1282 (2001).
13. D. Damjanovic, Rep. Prog. Phys. 61, 1267 (1998).
14. D. V. Taylor and D. Damjanovic, J. Appl. Phys. 82, 1973 (1997).
15. T. Shimuta, O. Nakagawara, T. Makino, S. Arai, H. Tabata and T. Kawai, J. Appl. Phys. 91, 2290 (2002).
16. T. Kumazawa, Y. Kumagai, H. Miura, and M. Kitano, Appl. Phys. Lett. 72, 608 (1998).
17. K. Yao, S. Yu, and F. E. H. Tay, Appl. Phys. Lett. 82, 4540 (2003).
18. M. B. Kelman, P. C. Mclntyre, B. C. Hendrix, S. M. Bilodeau, and J. F. Roeder, J. Appl. Phys. 93, 9231 (2003).
19. X. Lu et al., Appl. Phys. Lett. 76, 3103 (2000).
20. S. E. Park and T. R. Shrout, Appl. Phys. Lett. 82, 1804 (1997).
21. S. F. Liu, S. E. Park, T. R. Shrout, and L. E. Cross, J. Appl. Phys. 85, 2810 (1999).
22. M. K. Durbin, J. C. Hicks, S. E. Park, and T. R. Shrout, J. Appl. Phys. 87, 8159 (2000).
23. V. Nagarajan, I. G. Jenkins, S. P. Alpay, H. Li, S. Aggarwal, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh, J. Appl. Phys. 86, 595 (1999).
24. W. K. Lim, J. R. Ahn, Y. S. Kim, J. C. Lee. S. O. Park, and S. I. Lee, Ferroelectrics 259, 251 (2001).