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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 12, 2005, Pages 8528-8535

Dielectric properties of BaTiO3 films prepared by RF-plasma chemical vapor deposition

(2) Suzuki, Keigo a Kijima, Kazunori b

a MURATA MANUFACTURING CO LTD (Japan)

b KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Barium titanate; Chemical vapor deposition; Dielectric property; Nanoparticles; Rf plasma

Indexed keywords

ALUMINA; ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; FERROELECTRICITY; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; SILICA;

CAPACITANCE-VOLTAGE; CAPACITANCE-VOLTAGE (C-V) CURVES; NANOPARTICLES; RF-PLASMA;

BARIUM TITANATE;

EID: 31544461517 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.8528 Document Type: Article

Times cited : (7)

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