Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers

Journal of Electronic Materials

Volumn 38, Issue 9, 2009, Pages 1938-1943

  Dai, J N ^a   Wu, Z H ^a,b   Yu, C H ^a   Zhang, Q ^a   Sun, Y Q ^a   Xiong, Y K ^a   Han, X Y ^a   Tong, L Z ^a   He, Q H ^a   Ponce, F A ^b   Chen, C Q ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

A Plane GaN; Metalorganic chemical vapor deposition (MOCVD); Photoluminescence (PL); Raman; Scanning electron microscope (SEM); X ray diffraction (XRD)

Indexed keywords

A-PLANE GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); RAMAN; SCANNING ELECTRON MICROSCOPE (SEM); X-RAY DIFFRACTION (XRD);

BUFFER LAYERS; CORUNDUM; CRYSTAL IMPURITIES; DIFFRACTION; ELECTRON MICROSCOPES; EPITAXIAL FILMS; GALLIUM NITRIDE; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SUBSTRATES; SUPERCONDUCTING FILMS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 68949147900     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0847-7     Document Type: Article

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