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Applied Physics A: Materials Science and Processing

Volumn 78, Issue 4, 2004, Pages 447-451

Polarization properties of nonpolar GaN films and (In, Ga)N/GaN multiple quantum wells

(2) Grahn, H T a Ploog, K H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC FIELD EFFECTS; FILM GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; OPACITY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS;

CONDUCTION BANDS; VALENCE BANDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242352511 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2402-3 Document Type: Article

Times cited : (2)

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