Role of the buffer layer thickness on the formation of basal plane stacking faults in a -plane GaN epitaxy on r -sapphire

Applied Physics Letters

Volumn 93, Issue 1, 2008, Pages

  Wu, Z H ^a   Fischer, A M ^a   Ponce, F A ^a   Yokogawa, T ^b   Yoshida, S ^b   Kato, R ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CORUNDUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SAPPHIRE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; STACKING FAULTS;

A PLANE; AMERICAN INSTITUTE OF PHYSICS (AIP); BASAL PLANE STACKING FAULTS; BUFFER LAYER THICKNESS; CRYSTALLINE STRUCTURES; EXTENDED DEFECTS; GAN EPITAXY; GAN FILMS; LOW TEMPERATURE (LTR); LOWER DENSITY; OPTICAL (PET) (OPET); R SAPPHIRE; RANDOMLY DISTRIBUTED;

MOLECULAR BEAM EPITAXY;

EID: 47249150091     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953082     Document Type: Article

References (13)

1. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
2. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991).
3. F. A. Ponce, MRS Bull. 22, 51 (1997).
4. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
5. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000).
6. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, Appl. Phys. Lett. 84, 3663 (2004).
7. B. A. Haskell, S. Nakamura, S. P. DenBaars, and J. S. Speck, Phys. Status Solidi B 244, 2847 (2007).
8. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
9. T. Gühne, Z. Bougrioua, P. Venńgùs, M. Leroux, and M. Albrecht, J. Appl. Phys. 101, 113101 (2007).
10. Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, and M. Kneissl, Appl. Phys. Lett. 92, 171904 (2008).
11. F. A. Ponce and J. Aranovich, Appl. Phys. Lett. 38, 439 (1981).
12. R. Liu, A. Bell, F. A. Ponce, C. Q. Chen, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 86, 021908 (2005).
13. J. Mei, S. Srinivasan, R. Liu, F. A. Ponce, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 88, 141912 (2006).