Cs incorporation in semiconductors during low-energy bombardment: A dynamic computer simulation study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 17, 2009, Pages 2808-2816

  Gnaser, Hubert ^a  

^a University of Koblenz Landau   (Germany)

Author keywords

Computer simulation; Cs irradiation; Semiconductors; Sputtering

Indexed keywords

CS ENERGIES; CS IRRADIATION; FLUENCES; GRADUAL CHANGES; IMPACT ENERGY; INCIDENCE ANGLES; INCIDENCE ENERGY; INP; IRRADIATION CONDITIONS; IRRADIATION ENERGY; LOW ENERGIES; MAXIMUM VALUES; MONTE CARLO CODES; PARTIAL SPUTTERING; PREFERENTIAL SPUTTERING; SEMICONDUCTORS; STATIONARY STATE; SURFACE BINDING ENERGIES; SURFACE CONCENTRATION; TARGET ATOM; TARGET COMPOSITION;

ATOMS; BINDING ENERGY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; FATIGUE CRACK PROPAGATION; GERMANIUM; IRRADIATION; RADIATION; SPUTTERING; TARGETS;

CESIUM;

EID: 68949112113     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.06.079     Document Type: Article

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