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Volumn 267, Issue 3, 2009, Pages 519-524

On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon

Author keywords

AES; Cesium; Gallium; Ionization; Sputtering; ToF SIMS; Work function; Xenon

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CESIUM; DEPTH PROFILING; FUNCTIONS; IONIZATION; IONIZATION OF LIQUIDS; IONS; PROBABILITY DENSITY FUNCTION; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SURFACE REACTIONS; WORK FUNCTION; XENON;

EID: 59549088147     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.11.026     Document Type: Article
Times cited : (16)

References (43)
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  • 6
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    • Niehuis, E.1    Grehl, T.2
  • 9
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    • Vickerman J.C., and Briggs D. (Eds), IMPublications, Chichester, West Sussex, UK
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    • (1988) ToF-SIMS , pp. 1
    • Vickerman, J.C.1
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  • 36
    • 59549096099 scopus 로고    scopus 로고
    • J. Brison, N. Mine, R.G. Vitchev, B. Douhard, L. Houssiau, Surf. Interface Anal., submitted for publication.
    • J. Brison, N. Mine, R.G. Vitchev, B. Douhard, L. Houssiau, Surf. Interface Anal., submitted for publication.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.