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Volumn 267, Issue 3, 2009, Pages 519-524
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On the understanding of positive and negative ionization processes during ToF-SIMS depth profiling by co-sputtering with cesium and xenon
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Author keywords
AES; Cesium; Gallium; Ionization; Sputtering; ToF SIMS; Work function; Xenon
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CESIUM;
DEPTH PROFILING;
FUNCTIONS;
IONIZATION;
IONIZATION OF LIQUIDS;
IONS;
PROBABILITY DENSITY FUNCTION;
SECONDARY EMISSION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON WAFERS;
SURFACE REACTIONS;
WORK FUNCTION;
XENON;
AES;
AUGER ELECTRONS;
CO-SPUTTERING;
DEPTH PROFILES;
DUAL-BEAM DEPTH PROFILING;
ELECTRON-TUNNELING MODELS;
GALLIUM;
IN-SITU;
ION YIELDS;
IONIZATION PROCESS;
SECONDARY IONS;
SPUTTERING;
STEADY STATE;
SURFACE CONCENTRATIONS;
TOF-SIMS;
XENON IONS;
CESIUM COMPOUNDS;
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EID: 59549088147
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2008.11.026 Document Type: Article |
Times cited : (16)
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References (43)
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