MC simulations of depth profiling by low energy ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 187, Issue 1, 2002, Pages 36-47

  Kosiba, R ^a,b   Ecke, G ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

Depth profiling; Monte Carlo simulation

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; COMPUTER SIMULATION; DOPING (ADDITIVES); MONTE CARLO METHODS; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SPUTTERING; SURFACE TOPOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILING; LOW ENERGY IONS;

ION BEAMS;

EID: 0036148367     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00848-5     Document Type: Article

References (31)