First- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors

Semiconductor Science and Technology

Volumn 24, Issue 4, 2009, Pages

  Nunez Perez, José Cruz ^a   Lakhdara, Maya ^b   Bouhouche, Manel ^b   Verdier, Jacques ^a   Latreche, Sada ^b   Gontrand, Christian ^a  

^a UNIVERSITÉ DE LYON   (France)

^b Universite Mentouri Constantine   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; HETEROJUNCTIONS; OSCILLATORS (ELECTRONIC); PARAMETER EXTRACTION; SILICON COMPOUNDS;

ADVANCED DESIGN SYSTEM; COMMERCIAL SIMULATORS; DRIFT-DIFFUSION MODEL; ELECTRICAL CHARACTERISTIC; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); LOW-FREQUENCY NOISE; MODELLING AND EXPERIMENTS; SIGEC HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 68849107520     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/4/045010     Document Type: Article

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