Bandgap and strain engineering in SiGeC heterojunction bipolar transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2633-2636

  Yuki, Koichiro ^a   Toyoda, Kenji ^a   Takagi, Takeshi ^a   Kanzawa, Yoshihiko ^a   Nozawa, Katsuya ^a   Saitoh, Toru ^a   Kubo, Minoru ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Bandgap; HBT; SiGeC; Strain

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ENERGY GAP; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ALLOYS; STRAIN; ULTRAHIGH VACUUM; WIRELESS TELECOMMUNICATION SYSTEMS; X RAY DIFFRACTION ANALYSIS;

ULTRA-HIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV-CVD);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035300712     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2633     Document Type: Article

References (6)