Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 767-773

  Bary, Laurent ^b   Borgarino, Mattia ^a,b,c   Plana, Robert ^a,b,d   Parra, Thierry ^b,d   Kovacic, Stephen J ^e   Lafontaine, Hugues ^e   Graffeuil, Jacques ^a,b,d  

^a IEEE

^b LAAS CNRS   (France)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d UNIVERSITÉ PAUL SABATIER   (France)

^e SiGe Microsystems   (Canada)

Author keywords

Bipolar; Heterojunction bipolar transistors (HBT); Low frequency noise (LFN); SiGe

Indexed keywords

BUFFER AMPLIFIERS; ELECTRIC IMPEDANCE; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

LOW-FREQUENCY NOISE (LFN) CHARACTERIZATION; TRANSIMPEDENCE AMPLIFIERS (TA);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035307348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915724     Document Type: Article

References (24)

1. RFIC's for Mobile Communication Systems using SiGe Bipolar Technology
2. The numerous related papers on the Proceedings of the Workshop on Silicon and SiGe Technologies and Circuits
3. A High-Speed Low 1/f Noise SiGe HBT Technology Using Epitaxially-Aligned Polysilicon Emitters
4. A Precision Noise Measurement and Analysis Method Used to Estimated Reliability of Semiconductor Devices
5. Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors
6. Correlation of Low-Frequency Noise and Emitter-Base Reverse-Bias Stress in Epitaxial Si- and SiGe-base Bipolar Transistor
7. Investigation of HBT Oscillator Noise Conversion Through 1/f Noise and Noise Up-Conversion Studies
8. A General Theory of Phase Noise in Electrical Oscillators
9. Low frequency noise characterization of self aligned InP/In-GaAs heterojunction bipolar transistors
10. 1/f Noise in A1GaAs/GaAs HBT's using Ultransensitive Characterization Techniques for Identifying Noise Mechanisms
11. Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities
12. Measurement of Low-Frequency Base and Collector Current Noise and Coherence in SiGe Heterojunction Bipolar Transistors Using Transimpedance Amplifiers
13. Dimension scaling of 1/f noise in the base current of quasiself-aligned polysislicon emitter bipolar transistors
14. Low frequency noise in polysiliconemitter bipolar junction transistors
15. Direct Parametric Extraction of 1/f Noise Source Magnitude and Physical Location from Baseband Spectra in HBT's
16. Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors
17. Low-Frequency Noise in UHV/CVD Epitaxial Si and SiGe Bipolar Transistors
18. Low-Frequency Noise Characteristics of Advanced Si and SiGe Bipolar Transistors
19. Low frequency noise spectroscopy in MOS and Bipolar devices
20. Low-Frequency Noise Characterization of Self-Aligned A1GaAs/GaAs Heterojunction Bipolar Transistors with a Noise Corner Frequency Below 3kHz
21. Improved Correlation Measurements Using Voltage and Transimpedance Amplifiers in Low-frequency Noise Characterization of Bipolar Transistors
22. The Transistor-A New Semiconductor Amplifier
23. Accurate Noise Measurements on Transistors
24. Low frequency noise in polysilsicon emitter bipolar transistors