Calculation of figures of merit of Si/Si1-x-yGexCy/Si HBTs and their optimization

Solid-State Electronics

Volumn 45, Issue 11, 2001, Pages 1885-1889

  Biswas, A ^a   Basu, P K ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Base transit time; Current gain; Early voltage; Heterojunction bipolar transistor; SiGeC base

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; STRAIN; THIN FILMS;

MOLE FRACTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035501269     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00228-3     Document Type: Article

References (16)