In situ observation of grain growth on electroplated cu film by electron backscatter diffraction

Japanese Journal of Applied Physics

Volumn 48, Issue 6, 2009, Pages

  Nemoto, Takenao ^a   Fukino, Tatsuya ^b   Tsurekawa, Sadahiro ^b   Gu, Xun ^a   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b KUMAMOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMATED ELECTRON BACKSCATTER DIFFRACTION; ELECTRON BACK SCATTER DIFFRACTION; ELECTROPLATED CU FILMS; HARDNESS MEASUREMENT; HEATING STAGE; IN-SITU OBSERVATIONS; LOW MELTING POINT; PREFERENTIAL ORIENTATION; RANDOM GRAIN BOUNDARIES; SEGREGATION OF IMPURITIES; TWIN BOUNDARIES;

BACKSCATTERING; ELECTRON DIFFRACTION; ELECTROPLATING; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MELTING POINT; PHYSICAL VAPOR DEPOSITION; SULFUR; TEXTURES;

GRAIN GROWTH;

EID: 68649093542     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.066507     Document Type: Article

References (22)

1. T. Nitta, T. Ohmi, T. Hoshi, T. Takewaki, and T. Shibata: IEICE Trans. Electron. E76-C (1993) 626.
2. M. A. Gribelyuk, S. G. Malhotra, P. S. Locke, P. DeHaven, J. Fluegel, C. Parks, and A. H. Murphy: Proc. Int. Interconnect Technology Conf., 2000, p. 188.
3. Q. T. Jiang and M. E. Thomas: J. Vac. Sci. Technol. B 19 (2001) 762.
4. H. Park, S. J. Hwang, and Y. C. Joo: Acta Mater. 52 (2004) 2435.
5. T. Muppidia, D. P. Fielda, and J. E. Sanchez, Jr.: Thin Solid Films 471 (2005) 63.
6. A. Sekiguchi, J. Koike, S. Kamiya, M. Saka, and K. Maruyama: Appl. Phys. Lett. 79 (2001) 1264.
7. D. J. Dinglery: in Electron Backscatter Diffraction in Materials Science, ed. A. J. Schwartz, M. Kumar, and B. L. Adams (Kluwer Academic/Plenum, New York, 2000) p. 1.
8. S. Tsurekawa, S. Nakamichi, and T. Watanabe: Acta Mater. 54 (2006) 3617.
9. K. Mirpuri, H. Wendrock, S. Menzel, K. Wetzig, and J. Szpunar: Microelectron. Eng. 76 (2004) 160.
10. K. Mirpuri, H. Wendrock, S. Menzel, K. Wetzig, and J. Szpunar: Thin Solid Films 496 (2006) 703.
11. S. H. Brongersma, E. Richard, I. Vervoort, H. Bender, W. Vandervorst, and S. Langrange: J. Appl. Phys. 86 (1999) 3642.
12. Q. T. Jiang, R. Mikkola, B. Carpenter, and M. E. Thomas: Proc. Advanced Metallization Conf., 1998, p. 177.
13. J. M. E. Harper, C. Cabral, Jr., P. C. Andricacos, L. Gignac, I. C. Noyan, K. P. Rodbell, and C. K. Hu: J. Appl. Phys. 86 (1999) 2516.
14. M. Chen, S. S. Ho, R. Cheung, R. Morad, Y. Dordi, S. Renqarajan, and S. Tsuai: Proc. Int. Interconnect Technology Conf., 2000, p. 194.
15. C. V. Thompson: J. Appl. Phys. 58 (1985) 763.
16. D. G. Brandon: Acta Metall. 14 (1966) 1479.
17. L. E. Murr: in Interfacial Phenomena in Metals and Alloys (Addison- Wesley, Reading, MA, 1975) p. 145.
18. J. E. Northrup and M. L. Cohen: Phys. Rev. B 23 (1981) 2563.
19. M. Pierantoni, B. Aufray, and F. Cabane: J. Phys. Colloq. 46 (1985) C4-517 [in French].
20. D. Weygand, Y. Breichet, E. Rabkin, B. Straumal, and W. Gust: Philos. Mag. Lett. 76 (1997) 133.
21. Y. M. Wang, S. Cheng, Q. M. Wei, E. Ma, T. G. Nieh, and A. Hamza: Scr. Mater. 51 (2004) 1023.
22. J. J. Plombon, E. Andideh, V. M. Dubin, and J. Maiz: Appl. Phys. Lett. 89 (2006) 113124.