Microstructure evolution of electroplated Cu during room temperature transient

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 188-190

  Gribelyuk, M A ^a   Malhotra, S G ^a   Locke, P S ^a   DeHaven, P ^a   Fluegel, J ^a   Parks, C ^a   Simon, A H ^a   Murphy, R ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER; GRAIN BOUNDARIES; GRAIN GROWTH; MICROSTRUCTURE; X RAY ANALYSIS;

GRAIN BOUNDARY RESISTIVITY; IN-LENS DETECTOR; MAYADAS-SHATZKES MODEL; MICRO-STRUCTURE EVOLUTIONS; SECONDARY ELECTRONS; TEMPERATURE TRANSIENTS; TRANSFORMED STRUCTURE; TWIN GRAIN BOUNDARIES;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84962885366     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854321     Document Type: Conference Paper

References (4)

1. S. G. Malhotra et. al. Proc. of Adv. Metal. Conference (1999)
2. T. Ritzdorf, et.al., Proc.IEEE Int. Interconnect Tech. Conf., p. 166 (1998)
3. J. M. E. Harper et. al. J. Appl. Physics, 86, 2516 (1999)
4. A. F. Mayadas and M. Shatzkes, Phys. Rev. B 1, 1382 (1970)