Steady state and transient behavior of currents in AlGaN/GaN planar Schottky diodes and mechanism of current collapse

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1542-1550

  Hasegawa, Hideki ^a   Akazawa, Masamichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE (FLUID); LEAKAGE CURRENTS; MECHANISMS; METALS; NONMETALS; OXYGEN; SCHOTTKY BARRIER DIODES; STANDARDS; TIME MEASUREMENT; TRANSIENTS;

ALGANGAN; CAPACITANCE-VOLTAGE; CHARGING BEHAVIOR; CURRENT COLLAPSE; CURRENT TRANSIENTS; CURRENT-VOLTAGE; ELECTRICAL CHARACTERISTICS; EXCESS CURRENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HOPPING PROCESSES; HOPPING TRANSPORT; METAL CONTACTS; NONEXPONENTIAL; ON TIME; ORDERS-OF-MAGNITUDE; OXYGEN GETTERING; PINCH-OFF REGION; PLANAR SCHOTTKY DIODES; POWER-LAW DEPENDENCES; RATE-LIMITING PROCESSES; REVERSE LEAKAGE; SCHOTTKY; SCHOTTKY CONTACTS; STEADY STATES; STRETCHED EXPONENTIAL; SURFACE TRAPPING; TRANSIENT BEHAVIORS; TURN-OFF; UNDER GATE; VIRTUAL GATE; VOLTAGE PULSES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 49749107238     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2929865     Document Type: Article

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