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Volumn 517, Issue 23, 2009, Pages 6225-6229
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Interpretation of the hydrogen evolution during deposition of microcrystalline silicon by chemical transport
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Author keywords
Amorphous silicon; Ellipsometry; Hydrogen diffusion; Hydrogen plasma; Microcrystalline silicon
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Indexed keywords
A-SI:H;
CHEMICAL TRANSPORT;
EX SITU;
HYDROGEN DIFFUSION;
HYDROGEN EVOLUTION;
HYDROGEN PLASMA;
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
HYDROGENATED MICROCRYSTALLINE SILICON;
IN-SITU;
OUT-DIFFUSION;
PHOSPHORUS-DOPED;
PLASMA EXPOSURE;
AMORPHOUS FILMS;
ATOMS;
BORON;
BOUNDARY CONDITIONS;
DEPOSITION;
DEUTERIUM;
DIFFUSION;
ELLIPSOMETRY;
FILM GROWTH;
HYDROGEN;
HYDROGENATION;
MICROCRYSTALLINE SILICON;
PHOSPHORUS;
PLASMA DEPOSITION;
PLASMAS;
SEMICONDUCTING SILICON COMPOUNDS;
VOLTAGE DIVIDERS;
AMORPHOUS SILICON;
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EID: 68349146630
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.02.072 Document Type: Article |
Times cited : (10)
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References (25)
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