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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1049-1054

Relative importance of hydrogen atom flux and ion bombardment to the growth of μc-Si:H thin films

Author keywords

Crystal growth; Microcrystallinity; Nucleation; Photovoltaics; Plasma deposition; Raman scattering; Raman spectroscopy; Silicon; Solar cells; Thin film transistors

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL GROWTH; PHOTOVOLTAIC EFFECTS; RAMAN SCATTERING; SOLAR CELLS; THIN FILM TRANSISTORS; THIN FILMS;

EID: 33744534645     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.016     Document Type: Article
Times cited : (10)

References (21)
  • 13
    • 33744547355 scopus 로고    scopus 로고
    • E. Amanatides, S. Stamou, S. Boghosian, D. Mataras, in: Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, UK, vol. I (2000) p. 581.
  • 17
    • 33744521366 scopus 로고    scopus 로고
    • E. Amanatides, D. Mataras, B. Lyka, E. Katsia, D. Rapakoulias, in: Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, in press.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.