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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1049-1054
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Relative importance of hydrogen atom flux and ion bombardment to the growth of μc-Si:H thin films
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Author keywords
Crystal growth; Microcrystallinity; Nucleation; Photovoltaics; Plasma deposition; Raman scattering; Raman spectroscopy; Silicon; Solar cells; Thin film transistors
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Indexed keywords
AMORPHOUS MATERIALS;
CRYSTAL GROWTH;
PHOTOVOLTAIC EFFECTS;
RAMAN SCATTERING;
SOLAR CELLS;
THIN FILM TRANSISTORS;
THIN FILMS;
IONS PER MONOLAYER;
MICROCRYSTALLINE SILICON GROWTH;
MICROCRYSTALLINITY;
PLASMA PARAMETERS;
ION BOMBARDMENT;
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EID: 33744534645
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2006.02.016 Document Type: Article |
Times cited : (10)
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References (21)
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