Efficient AlGaN/GaN HEMT power amplifiers

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 87-90

  Quay, R ^a   Raay, Van F ^a   Kuhn, J ^a   Kiefer, R ^a   Waltereit, P ^a   Zorcic, M ^a   Musser, M ^a   Bronner, W ^a   Dammann, M ^a   Eggebert, M Seelmann ^a   Schlechtweg, M ^a   Mikulla, M ^a   O Ambache, ^a   Thorpe, J ^b   Riepe, K ^b   Van Rijs, F ^b   Saad, M ^b   Harm, L ^b   Rodle, T ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b United Monolithic Semiconductors GmbH   (Germany)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMT; AVERAGE POWER; BAND FREQUENCIES; CHANNEL TEMPERATURE; DUAL STAGE; GAN HEMT; GATE-LENGTH; HIGH GAIN; LINEAR GAIN; MICROSTRIP TRANSMISSION; MOBILE COMMUNICATIONS; OUTPUT POWER; POWER LEVELS; POWER-ADDED EFFICIENCY; PROCESS YIELD; RF-POWER; SIC SUBSTRATES; SINGLE STAGE; STANDARD DEVIATION;

GALLIUM NITRIDE; INTEGRATED CIRCUITS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 66649133087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772235     Document Type: Conference Paper

References (6)

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