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Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge

(6) Sung, Dougyong a Woo, Jehun a Lim, Kyungchun a Kim, Kyungsun a Volynets, Vladimir a Kim, Gon Ho b

a SAMSUNG Electronics (South Korea)

b Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

300 MM WAFERS; AR PLASMAS; BIAS POWER; CAPACITIVE DISCHARGES; CONTROLLED PHASE SHIFT; ETCH RATES; IN-PROCESS; LOW FREQUENCY; OPTICAL EMISSIONS; PHASE SHIFT CONTROL; PLASMA UNIFORMITY; RADIAL PROFILES; VERY HIGH FREQUENCY;

KRYPTON; PHASE SHIFT; PLASMA DENSITY; PLASMAS;

ELECTRIC DISCHARGES;

EID: 68249135370 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3176496 Document Type: Article

Times cited : (17)

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