Improvement in etch rate uniformity using resistive electrodes with multistep cavity

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4289-4295

  Koshiishi, Akira ^a   Himori, Shinji ^a   Iijima, Tamotsu ^b  

^a TOKYO ELECTRON LTD   (Japan)

^b Freq Ltd   (Japan)

Author keywords

Cavity; Electrode; Etch rate; Multistep; Plasma; Resistivity; Uniformity

Indexed keywords

ELECTRIC CONDUCTIVITY; ETCHING; FINITE ELEMENT METHOD; PLASMA SOURCES; SILICON WAFERS;

MULTISTEP CAVITY; PARALLEL-PLATE PLASMA (CCP); UNIFORMITY;

ELECTROCHEMICAL ELECTRODES;

EID: 34547828915     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.4289     Document Type: Article

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