Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 1, 2009, Pages 13-19

  Sung, Dougyong ^a   Jeong, Sangmin ^a   Park, Youngmin ^a   Volynets, Vladimir N ^a   Ushakov, Andrey G ^a   Kim, Gon Ho ^b  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED CIRCUITS; ELECTRODES; GROUNDING ELECTRODES; INDUCTIVELY COUPLED PLASMA; PHASE SHIFT; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRIODES;

300MM WAFERS; BOTTOM ELECTRODES; CAPACITIVELY COUPLED PLASMA REACTORS; CAPACITIVELY COUPLED PLASMAS; CONTROLLED PHASE SHIFTS; EMISSION INTENSITIES; ETCHING RATES; HIGH FREQUENCIES; NON UNIFORMITIES; PLASMA CURRENTS; PLASMA EMISSIONS; PLASMA PARAMETERS; PROCESS CHARACTERISTICS; RADIAL POSITIONS; RADIAL PROFILES; RF VOLTAGES; SCANNING OPTICAL; SPATIAL UNIFORMITIES;

PLASMA DIAGNOSTICS;

EID: 58149498727     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3010717     Document Type: Article

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