Investigation of etch rate uniformity of 60 MHz plasma etching equipment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6613-6618

  Koshiishi, Akira ^a   Araki, Youichi ^a   Himori, Shinji ^a   Iijima, Tamotsu ^a  

^a NISCA Co Ltd   (Japan)

Author keywords

Cavity; CCP; Electrode; Etch rate; Plasma; Resistivity; Uniformity

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF GASES; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON GAS; FINITE ELEMENT METHOD; LSI CIRCUITS; PLASMA DENSITY; PLASMA SHEATHS; PLASMAS; RATE CONSTANTS;

CAPACITIVELY COUPLED PARALLEL PLATE PLASMA; ETCH RATE; ETCHING EQUIPMENT; RADIOFREQUENCY ELECTRIC FIELD DISTRIBUTION;

PLASMA ETCHING;

EID: 0036150578     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6613     Document Type: Article

References (4)