A novel high-speed multiplexing IC based on resonant tunneling diodes

IEEE Transactions on Nanotechnology

Volumn 8, Issue 4, 2009, Pages 482-486

  Choi, Sunkyu ^a   Jeong, Yongsik ^a   Lee, Jongwon ^a   Yang, Kyounghoon ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Monostable x2013; bistable logic element; Multiplexing; Quantum effect; Resonant tunneling diode

Indexed keywords

CIRCUIT BLOCKS; CONVENTIONAL TRANSISTORS; CURRENT MODE LOGIC; DC POWER CONSUMPTION; HIGH-SPEED; INP; LOW POWER; LOW-POWER DIGITAL CIRCUITS; MONOLITHIC TECHNOLOGIES; MULTIPLEXING OPERATION; NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS; QUANTUM EFFECT; QUANTUM EFFECTS; QUANTUM-EFFECT DEVICES; RESONANT TUNNELING DIODE; RESONANT TUNNELING DIODES; TRANSITION LOGIC;

BIPOLAR TRANSISTORS; DIGITAL INTEGRATED CIRCUITS; ELECTRON TUBE DIODES; FREQUENCY DIVIDING CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MULTIPLEXING; QUANTUM ELECTRONICS; RESONANT TUNNELING; SEMICONDUCTOR DIODES; TEMPERATURE MEASURING INSTRUMENTS; TUNNEL DIODES; WIND TUNNELS;

LOGIC CIRCUITS;

EID: 67949089581     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2013462     Document Type: Article

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