Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 614-627

  Zhao, Peiji ^b,c   Cui, Hong Liang ^a,b   Woolard, Dwight L ^a,d   Jensen, Kevin L ^a,e   Buot, F A ^a,e  

^a IEEE   (Spain)

^b Stevens Institute of Technology   (United States)

^c North Carolina State University   (United States)

^d U S ARMY RESEARCH OFFICE   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESONANT TUNNELING DIODES (RTD);

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; EQUIVALENT CIRCUITS; INDUCTANCE; PARAMETER ESTIMATION; PHONONS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; TUNNEL DIODE OSCILLATORS;

TUNNEL DIODES;

EID: 0035308145     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915658     Document Type: Article

References (19)

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