CML-type MOnostable Bistable logic element (MOBILE) using InP-based monolithic RTD/HBT technology

Electronics Letters

Volumn 40, Issue 13, 2004, Pages 792-793

  Choi, S ^a   Lee, B ^a   Kim, T ^a   Yang, K ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIODES; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; HETEROJUNCTION BIPOLAR TRANSISTORS; NEGATIVE RESISTANCE; RESONANT TUNNELING; SWITCHING;

CURRENT MODULATION; CURRENT-MODE-LOGIC (CML); RESONANT TUNNELING DIODES (RTD);

LOGIC DEVICES;

EID: 3042735749     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040540     Document Type: Article

References (7)

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2. Mazumder, P., Kulkarni, S., Bhattachaya, M., Sun, J.P., and Haddad, G.I.: 'Digital circuit applications of resonant tunneling devices', Proc. IEEE, 1998, 86, (4), pp. 664-686
3. Maezawa, K., Matsuzaki, H., Yamamoto, M., and Otsui, T.: 'High-speed and low-power operation of a resonant tunneling logic gate MOBILE', IEEE Electron Device Lett., 1998, 19, (3), pp. 80-82
4. Otten. W., Glosekotter, P., Veiling, P., Brennemann, A., Prost, W., Goser, K.F., and Tegude, F.-J.: 'InP-based monolithically integrated RTD/HBT MOBILE for logic circuits'. Proc. InP and Related Materials, Nara, Japan, 2001, pp. 232-235
5. Lin, C.-H., Yang, K., Gonzalez, A.F., East, J.R., Mazumder, P., and Haddad, G.I.: 'InP-based high speed digital logic gates using an RTD/HBT heterostructure'. Proc. InP and Related Materials, Davos, Switzerland. 1999, pp. 419-422
6. max enhancement in InP-based DHBTs using a new lateral reverse-etching technique'. Proc. InP and Related Materials, Santa Barbara, CA, USA, 2003, pp. 22-25
7. Sano, K., Murata, K., Otsuji, T., Akeyoshi, T., Shimizu, N., and Sano, E.: 'An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode', IEEE J. Solid-State Circuits, 2001, 36, (2), pp. 281-289