P-type conversion of ZnO thin films by plasma immersion ion implantation

Electrochemical and Solid-State Letters

Volumn 12, Issue 9, 2009, Pages

  Zhang, Shuyu ^a   Liang, Rongqing ^a   Ou, Qiongrong ^a   Wu, Xiaojing ^a   Jiang, Meifu ^b   Nie, Zongfu ^a   Liu, Feng ^a   Chang, Xijiang ^a   Wang, Yipeng ^a   Du, Jilong ^b   Wang, Peijun ^b   Xin, Qianqian ^a  

^a FUDAN UNIVERSITY   (China)

^b SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED ZNO; CODOPING METHOD; P TYPE ZNO; P-TYPE; PLASMA IMMERSION ION IMPLANTATION; POST ANNEALING; ZNO; ZNO THIN FILM;

ALUMINUM; ATOMS; DOPING (ADDITIVES); HOLE CONCENTRATION; HOLE MOBILITY; ION BOMBARDMENT; OXYGEN; OXYGEN VACANCIES; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; ZINC OXIDE;

ION IMPLANTATION;

EID: 67651233803     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3156835     Document Type: Article

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