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Volumn 277, Issue 1, 2000, Pages 42-46
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Modeling of the relationship between implantation parameters and implantation dose during plasma immersion ion implantation
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Author keywords
Implantation dose; Modeling; Plasma immersion ion implantation; Silicon processing
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Indexed keywords
FORECASTING;
ION BEAMS;
IONS;
MICROELECTRONICS;
MODELS;
OPTIMIZATION;
PLASMA APPLICATIONS;
SILICON ON INSULATOR TECHNOLOGY;
SILICON WAFERS;
ACCELERATING VOLTAGES;
IMPLANTATION DOSE;
IMPLANTATION PARAMETERS;
ONE DIMENSIONAL ANALYTICAL MODEL;
PLASMA IMMERSION ION IMPLANTATION;
PROCESSING CONDITION;
SILICON PROCESSING;
SILICON-ON- INSULATORS (SOI);
ION IMPLANTATION;
SILICON;
ARTICLE;
IMMERSION;
IMPLANTATION;
MATERIAL STATE;
MATHEMATICAL ANALYSIS;
PHYSICS;
PLASMA;
PLASMA IMMERSION ION IMPLANTATION;
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EID: 0034645022
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/S0375-9601(00)00673-3 Document Type: Article |
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Times cited : (19)
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References (24)
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