Ultra-fast gain recovery and compression due to auger-assisted relaxation in quantum dot semiconductor optical amplifiers

Journal of Lightwave Technology

Volumn 27, Issue 13, 2009, Pages 2530-2536

  Qasaimeh, Omar R ^a  

^a JORDAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Jordan)

Author keywords

Auger assisted dynamics; Doping; Quantum dot; Semiconductor optical amplifier

Indexed keywords

ACTIVE REGIONS; APPLIED CURRENT; DOPING; ELECTRON HOLE; ELECTRON PROCESS; GAIN COMPRESSION; GAIN DYNAMICS; GAIN RECOVERY; GAIN RECOVERY TIME; P-TYPE; QUANTUM DOT; QUANTUM DOT SEMICONDUCTOR OPTICAL AMPLIFIER; RATE-EQUATION MODELS; ULTRA-FAST;

AUGERS; DOPING (ADDITIVES); DYNAMICS; ELECTRONS; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR OPTICAL AMPLIFIERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67651121554     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2009.2014176     Document Type: Article

References (25)

1. M. Van der Poel, E. Gehrig, O. Hess, D. Birkedal, and J. Hvam, "Ultrafast gain dynamics in quantum-dot amplifiers: Theoretical analysis and experimental investigations," IEEE J. Quantum Electron vol. 41, no. 9, pp. 1115-1123, Sep. 2005.
2. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. Sellin, D. Ouyang, and D. Bimberg, "Excited-state gain dynamics in InGaAs quantum-dot amplifiers," IEEE Photon. Technol. Lett., vol. 17, no. 10, pp. 2014-2016, Oct. 2005.
3. H. C. Wong, G. B. Ren, and J. M. Rorison, "The constraints on quantum-dot semiconductor optical amplifiers for multichannel amplification," IEEE Photon. Technol. Lett., vol. 18, no. 20, pp. 2075-2077, 2006.
4. L. Jiang and L. V. Asryan, "Excited-state-mediated capture of carriers into the ground state and the saturation of optical power in quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 18, no. 24, pp. 2611-2613, 2006.
5. C. Z. Tong, S. F. Yoon, C. Y. Ngo, C. Y. Liu, and W. K. Loke, "Rate equations for 1.3- μm dots-under-a-well and dots-in-a-well self-assembled InAs-GaAs quantum-dot lasers," IEEE J. Quantum Electron, vol. 42, no. 11, pp. 1175-1183, Nov. 2006.
6. M. T. Todaro, A. Salhi, L. Fortunato, R. Cingolani, A. Passaseo, M. De Vittorio, P. Della Casa, F. Ghiglieno, and L. Bianco, "High-performance directly modulated 1.3- μm undoped InAs-InGaAs quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 19, no. 4, pp. 191-193, 2007.
7. T. Akiyama, H. Kuwatsuka, N. Hatori, Y. Nakata, H. Ebe, and M. Sugawara, "Symmetric highly efficient ( ∼0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers," IEEE Photonics Tech. Lett., vol. 14, no. 8, pp. 1139-1141, 2002.
8. J.-L. Xiao and Y.-Z. Huang, "Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers," IEEE J. Quantum Electron, vol. 44, no. 5, pp. 448-445, May 2008.
9. E. U. Rafailov, P. Loza-Alvarez, W. Sibbett, G. S. Sokolovskii, D. A. Livshits, A. E. Zhukov, and V. M. Ustinov, "Amplification of femtosecond pulses over by 18 dB in a quantum-dot semiconductor optical amplifier," IEEE Photon. Technol. Lett., vol. 15, no. 8, pp. 1023-1025, 2003.
10. J. Wang, P. Allmen, J.-P. Leburton, and K. Linden, "Auger recombination in long-wavelength strained-layer quantum-well structures," IEEE J. Quantum Electron, vol. 31, no. 5, pp. 864-874, May 1995.
11. S. Hausser, G. Fuchs, A. Hangleiter, K. Streubel, and W. Tsang, "Auger recombination in bulk and quantum well InGaAs," Appl. Phys. Lett. vol. 56, pp. 913-915, 1990.
12. Z.-K. Wu, H. Choi, X. Su, S. Chakrabarti, P. Bhattacharya, and T. B. Norris, "Ultrafast electronic dynamics in unipolar n-doped InGaAs-GaAs self-assembled quantum dots," IEEE J. Quantum Electron, vol. 43, no. 6, pp. 486-496, Jun. 2007.
13. T. W. Berg, S. Bischoff, I. Magnusdottir, and J. Mørk, "Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices," IEEE Photon. Technol. Lett., vol. 13, no. 6, pp. 541-543, 2001.
14. O. Qasaimeh, "Novel closed-form model for multiple-state quantum dot semiconductor optical amplifiers," IEEE J. Quantum Electron, submitted for publication.
15. A. A. Dikshit and J. M. Pikal, "Carrier distribution, gain, and lasing in 1.3- μm InAs-InGaAs quantum-dot lasers," IEEE J. Quantum Electron, vol. 40, no. 2, pp. 105-112, Feb. 2004.
16. A. Salhi, G. Rainò, L. Fortunato, V. Tasco, G. Visimberga, L. Martiradonna, M. T. Todaro, M. D. Giorgi, R. Cingolani, A. Trampert, M. De Vittorio, and A. Passaseo, "Enhanced performances of quantum dot lasers operating at 1.3 μm," IEEE J. Sel. Topics Quantum Electron. vol. 14, no. 4, pp. 1188-1196, 2008.
17. O. Qasaimeh, "Effect of doping on the optical characteristics of quantum dot semiconductor optical amplifiers," J. Lightw. Technol. accepted for publication.
18. R. R. Alexander, D. T. D. Childs, H. Agarwal, K. M. Groom, H.-Y. Liu, M. Hopkinson, R. A. Hogg, M. Ishida, T. Yamamoto, M. Sugawara, Y. Arakawa, T. J. Badcock, R. J. Royce, and D. J. Mowbray, "Systematic study of the effects of modulation p-doping on 1.3- μm quantum-dot lasers," IEEE J. Quantum Electron, vol. 43, no. 12, pp. 1129-1139, Dec. 2007.
19. O. B. Shchekin and D. G. Deppe, "Low-threshold high-to 1.3- μm InAs quantum-dot lasers due to p-type modulation doping of the active region," IEEE Photon. Technol. Lett., vol. 14, no. 9, pp. 1231-1233, 2002.
20. S. Fathpour, Z. Mi, and P. Bhattacharya, "Small-signal modulation characteristics of p-doped 1.1- and 1.3- μm quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 17, no. 11, pp. 2250-2252, 2005.
21. P. M. Smowton, I. C. Sandall, D. J. Mowbray, H. Y. Liu, and M. Hopkinson, "Temperature-dependent gain and threshold in p-doped quantum dot lasers," IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 5, pp. 1261-1266, 2007.
22. M. Asasa, A. Kameyama, and Y. Suematsu, "Gain and intervalence band absorption in quantum-well lasers," IEEE J. Quantum Electron, vol. QE-20, no. 7, pp. 745-753, 1984.
23. T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, and A. V. Uskov, "Carrier capture dynamics of InAs/GaAs quantum dots," Appl. Phys. Lett., vol. 90, p. 122108, 2007.
24. P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, "Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers," IEEE Photon. Technol. Lett., vol. 12, no. 6, pp. 594-596, 2000.
25. K. Kim, J. Urayama, T. B. Norris, J. Singh, J. Phillips, and P. Bhattacharya, "Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots," Appl. Phys. Lett., vol. 81, no. 4, pp. 670-672, 2002.