GaInNAs-based high-power and tapered laser diodes for pumping applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 968-972

  Bisping, Dirk ^a   Pucicki, Damian ^b   Fischer, Marc ^c   Koeth, Johannes ^c   Zimmermann, Christian ^c   Weinmann, Pia ^a   Höfling, Sven ^a   Kamp, Martin ^a   Forchel, Alfred ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

Amplifiers; Continuous wave (CW) lasers; Epitaxial growth; Optical fiber amplifiers; Optical pumping; Quantum well lasers; Semiconductor epitaxial layers; Semiconductor lasers

Indexed keywords

AMPLIFIERS; BEAM PROPAGATION FACTOR; CONTINUOUS WAVES; CONTINUOUS-WAVE (CW) LASERS; GAINNAS; HIGH BEAM QUALITY; HIGH BRIGHTNESS; HIGH POWER LASER DIODE; HIGH-POWER; INTERNAL LOSS; MAXIMUM OUTPUT; OUTPUT POWER; PUMPING APPLICATIONS; RAMAN AMPLIFIER; ROOM TEMPERATURE; SEMICONDUCTOR EPITAXIAL LAYERS; SINGLE MODE EMISSION; TAPERED LASER DIODES; WAVELENGTH RANGES;

CONTINUOUS WAVE LASERS; DIODES; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FIBER AMPLIFIERS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; LASERS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; OPTICAL MATERIALS; OPTICAL PUMPING; OPTICALLY PUMPED LASERS; PUMPS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 67650865922     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2014250     Document Type: Article

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