High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources

Electronics Letters

Volumn 41, Issue 20, 2005, Pages 1125-1127

  Deubert, S ^a   Debusmann, R ^a   Reithmaier, J P ^a   Forchel, A ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRICAL OPTICS; LIGHT EMISSION; OPTIMIZATION; PHASE SHIFT; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

DOT GEOMETRY; QUANTUM DOT LASERS; THERMAL INDUCED WAVELENGTH SHIFT; WALLPLUG EFFICIENCIES;

SEMICONDUCTOR LASERS;

EID: 27144462742     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052675     Document Type: Article

References (9)

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2. Huang, X., et al.: 'Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser', IEEE Photonics Technol. Lett., 2000, 12, (3), pp. 227-229
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