Nonlinear Properties of Tapered Laser Cavities

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 3, 2003, Pages 823-834

  Sujecki, Slawomir ^a   Borruel, Luis ^b   Wykes, James ^a   Moreno, Pablo ^b   Sumpf, Bernd ^c   Sewell, Phillip ^a   Wenzel, Hans ^c   Benson, Trevor M ^a   Erbert, Goetz ^c   Esquivias, Ignacio ^b   Larkins, Eric C ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Beam propagation modeling; High brightness lasers; Laser resonators; Optical beams; Semiconductor lasers

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; FINITE DIFFERENCE METHOD; LASER RESONATORS; LIGHT PROPAGATION; OPTICAL PUMPING; PHASE LOCKED LOOPS; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; TIME DOMAIN ANALYSIS; WAVEGUIDES;

BEAM PROPAGATION MODELING; LASER CAVITIES; OPTICAL BEAMS;

QUANTUM ELECTRONICS;

EID: 0141482527     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.818843     Document Type: Conference Paper

References (54)

1. G. P. Agrawal, Fiber-Optic Communication Systems. New York: Wiley, 1997.
2. IEEE J. Select. Topics Quantum Electron. (Special Issue on Lasers in Medicine and Biology), vol. 2, Dec. 1996.
3. W. Schulz and R. Poprawe, "Manufacturing with novel high-power diode lasers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 696-705, July-Aug. 2000.
4. D. Stryckman, G. Rousseau, M. D'Auteuil, and N. McCarthy, "Improvement of lateral-mode discrimination of broad-area diode lasers with profiled reflectivity output facet," Appl. Opt., vol. 35, pp. 5955-5959, 1996.
5. F. Camacho, C. J. Hamilton, K. McIlvaney, A.C. Bryce, and J. H. Marsh, "Laser structure for generating high optical power in a singlemode waveguide," Electron. Lett., vol. 34, pp. 460-461, Mar. 1998.
6. C. Zmudzinski, D. Botez, L. J. Mawst, A. Bhattacharya, M. Nesnidal, and R. F. Nabiev, "Three-core ARROW-type diode laser: Novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's," IEEE J. Select. Topics Quantum Electron., vol. 2, pp. 129-137, June 1995.
7. R. J. Lang, K. M. Dzurko, A. Hardy, S. Demars, A. Schoenfelder, and D. F. Welch, "Theory of grating-confined broad-area lasers," IEEE J. Quantum Electron., vol. 34, pp. 2197-2210, Nov. 1998.
8. S. O'Brien, D. F. Welch, R. A. Parke, D. Mehuys, K. Dzurko, R. J. Lang, R. Waarts, and D. Scifres, "Operating characteristics of high-power monolithically integrated flared amplifier master oscillator power amplifier," IEEE J. Quantum Electron., vol. 29, pp. 2052-2057, June 1993.
9. L. M. Tilton, G. C. Dente, A. H. Paxton, J. Cser, R. K. DeFreez, C. E. Moeller, and D. Depatie, "High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator," IEEE J. Quantum Electron., vol. 27, pp. 2098-2108, Sept. 1991.
10. D. Mehuys, D. F. Welch, and D. Scifres, "1 W CW, diffraction-limited, tunable external-cavity semiconductor laser," Electron. Lett., vol. 29, pp. 1254-1255, July 1993.
11. J. P. Donnelly, J. N. Walpole, S. H. Groves, R. J. Bailey, L. J. Missaggia, A. Napoleone, R. E. Reeder, and C. C. Cook, "1.5 μm tapered-gain-region lasers with high-CW output powers," IEEE Photon. Technol. Lett., vol. 10, pp. 1377-1379, Oct. 1998.
12. F. J. Wilson, J. J. Lewandowski, B. K. Nayar, D. J. Robbins, P. J. Williams, N. Carr, and F. O. Robson, "9.5 W CW output power from high brightness 980 nm InGaAs/AlGaAs tapered laser arrays," Electron. Lett., vol. 35, pp. 434-435, 1999.
13. S. Sujecki, J. Wykes, P. Sewell, A. Vukovic, T. M. Benson, E. C. Larkins, L. Borruel, and I. Esquivias, "Optical properties of tapered laser cavities," Proc. Inst. Elect. Eng.-Optodectron., to be published.
14. K. A. Williams, R. W. Penty, I. H. White, D. J Robbins, F. J. Wilson, J. J. Lewandowski, and B. K. Nayar, "Design of high-brightness tapered laser arrays," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 822-831, May-June 1999.
15. S. Mariojouls, S. Margott, A. Schmitt, M. Mikulla, J. Braunstein, G. Weimann, F. Lozes, and S. Bonnefont, "Modeling of the performance of high-brightness tapered lasers," Proc. SPIE, vol. 3944, pp. 395-406, 2000.
16. S. Ramanujan and H. G. Winful, "Spontaneous emission induced filamentation in flared amplifiers," IEEE J. Quantum Electron., vol. 32, pp. 784-789, May 1996.
17. E. Gering, O. Hess, and R. Wallenstein, "Modeling of the performance of high-power diode amplifier systems with on opto-thermal microscopic spatio-temporal theory," IEEE J. Quantum Electron., vol. 35, pp. 320-331, Mar. 1999.
18. J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," Proc. Inst. Elect. Eng., Optoelectron., vol. 149, pp. 145-151, 2002.
19. B. Sumpf, R. Hülsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle, "High-brightness 735 nm tapered diode lasers," Electron. Lett., vol. 38, pp. 183-184, Feb. 2002.
20. L. Borruel, S. Sujecki, M. Krakowski, B. Sumpf, P. Moreno, J. Wykes, S. C. Auzanneau, G. Erbert, D. Rodríguez, P. Sewell, M. Calligaro, H. Wenzel, T. M. Benson, E. C. Larkins, and I. Esquivias, "High brightness tapered lasers at 732 nm and 975 nm: Experiments and numerical analysis," in Proc. IEEE Int. Semiconductor Laser Conf., Germany, Sept. 2002.
21. R. F. Kazarinov, C. H. Henry, and R. A. Logan, "Longitudinal mode self-stabilization in semiconductor lasers," J. Appl. Phys., vol. 53, pp. 4631-4643, 1982.
22. C. Z. Ning, J. V. Moloney, A. Egan, and R. A. Indik, "A first-principles fully space-time resolved model of a semiconductor laser model," J. Opt. B, Quantum Semiclassical Optics, vol. 9, p. 681, 1997.
23. G. R. Hadley, "Numerical simulation of microcavity diode lasers using FDTD methods on a triangular grid," in Proc. Int. Workshop Numerical Modeling, Hagen, Germany, 2001.
24. H. Wenzel, B. Sumpf, and G. Erbert, "High-brightness diode lasers," Comptes Rendue Physique, submitted for publication.
25. M. Gruppen and K. Hess, "Simulation of carrier transport and nonlinearities in quantum well laser diodes," IEEE J. Quantum Electron., vol. 34, pp. 120-139, Jan. 1998.
26. J. V. Moloney, R. A. Indik, and C. Z. Nong, "Full space time simulation for high brightness semiconductor lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 731-733, June 1997.
27. G. H. B. Thompson, Physics of Semiconductor Laser Devices. New York: Wiley, 1990.
28. A. H. Paxton and G. C. Dente, "Filament formation in semiconductor laser gain regions," J. Appl. Phys., vol. 70, pp. 2921-2925, 1991.
29. L. Goldberg, M. R. Surette, and D. Mehuys, "Filament formation in a tapered GaAlAs optical ampiflier," Appl. Phys. Lett., vol. 62, no. 19, pp. 2304-2306, 1993.
30. A. Egan, C. Z. Ning, J. V. Moloney, R. A. Indik, M. W. Wright, D. J. Bossert, and J. G. McInerney, "Dynamic instabilities in master oscillator power amplifier semiconductor lasers," IEEE J. Quantum Electron., vol. 34, pp. 166-170, Jan. 1998.
31. Z. Dai, R. Michalzik, P. Unger, and K. J. Ebeling, "Numerical simulation of broad-area high-power semiconductor laser amplifiers," IEEE J. Quantum Electron., vol. 33, pp. 2240-2254, Dec. 1997.
32. P. M. Smowton and P. Blood, "The differential efficiency of quantum well lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 491-498, Apr. 1997.
33. P. Salet, F. Gerard, T. Fillion, A. Pinquier, J. L. Gentner, S. Delpine, and P. Doussiere, "1.1 W continuous wave 1480 nm semiconductor lasers with distributed electrodes for mode shaping," IEEE Photon. Technol. Lett., vol. 10, pp. 1706-1708, Dec. 1998.
34. B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics. New York:Wiley, 1991.
35. J. Arias, L. Borruel, B. Romero, I. Esquivias, J. P. Hirtz, J. Nagle, and P. Collot, "One-dimensional simulation of high power laser diode structures," in NUSOD'02, Zurich, Switzerland.
36. L. Borruel, S. Sujecki, I. Esquivias, J. Wykes, P. Sewell, T. M. Benson, E. C. Larkins, J. Arias, and B. Romero, "A self consistent electrical, thermal and optical model of high brightness tapered lasers," in Proc. SPIE Photonics West, San Jose, CA, 2002.
37. HAROLD, Photon Design Ltd., U.K.
38. J. Arias, L. Borruel, B. Romero, G. Batko, I. Esquivias, R. G.R. Gómez Alcalá, J. P. Hirtz, J. Nagle, and P. Collot, "One-dimensional simulation of high power laser diode structures," IEEE J. Select. Topics Quantum Electron., submitted for publication.
39. 0.75As-GaAs quantum-well lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 779-801, July 1999.
40. B. Romero, J. Arias, I. Esquivias, and M. Cada, "Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers," Appl. Phys. Lett., vol. 76, no. 12, pp. 1504-1506, 2000.
41. L. Borruel, J. Arias, B. Romero, and I. Esquivias, "Incorporation of carrier capture and escape processes into a self-consistent cw model for quantum well lasers," Microelectron. J., vol. 34, no. 5-8, pp. 675-677, 2003.
42. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995.
43. H. Wenzel, G. Erbert, and P. M. Enders, "Improved theory of the refractive-index change in quantum-well lasers," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 637-642, May-June 1999.
44. M. S. Stern, "Semi-vectorial polarized finite difference method for optical waveguides with arbitrary index profiles," Proc. Inst. Elect. Eng., vol. 135, pp. 56-63, 1988.
45. J. G. Wykes, S. Sujecki, P. Sewell, T. M. Benson, E. C. Larkins, I. Esquivias, and L. Borruel, "Convergence behavior of coupled electromagnetic/thermal/electronic high power laser models," in Proc. IEE Computation in Electromagnetics Conf., Bournemouth, U.K., Apr. 8-11, 2002.
46. G. P. Agrawal, "Fast-Fourier-Transform based beam-propagation model for stripe-geometry semiconductor laser: Inclusion of axial effects," J. Appl. Phys., vol. 56, no. 11, pp. 3100-3109, 1984.
47. T. Anada, T. Hokazono, T. Hiraoka, H. Jui-Pang, T. M. Benson, and P. Sewell, "Very-wide-angle beam propagation methods for integrated optical circuits," IEICE Trans. Electron., vol. E82-C, pp. 1154-1158, 1999.
48. T. M. Benson, P. Sewell, and A. Vukovic, "Interfacing the finite difference beam propagation method with fast semi-analytic techniques," in Proc. OSA Integrated Photonics Research Symp., Quebec, QC, Canada, 2000, pp. 48-50.
49. L. B. Felsen and N. Marcuvitz, Radiation and Scattering of Waves. Oxford, U.K.: Oxford Univ. Press, 1994.
50. S. Adachi, Ed., Properties of Aluminum Gallium Arsenide. London, U.K.: Inspec, 1993.
51. S. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, pp. 5815-5875, 2000.
52. S. P. Morgan, private communication.
53. J. R. Marciante and G. P. Agrawal, "Nonlinear mechanisms of filamentation in broad-area semiconductor lasers," IEEE J. Quantum Electron., vol. 32, pp. 590-597, Apr. 1996.
54. G. Levy and A. Hardy, "Chaotic effects in flared lasers: A numerical analysis," IEEE J. Quantum Electron., vol. 33, pp. 26-32, Jan. 1997.