High-temperature high-power operation of GaInNAs laser diodes in the 1220-1240-nm wavelength range

IEEE Photonics Technology Letters

Volumn 20, Issue 21, 2008, Pages 1766-1768

  Bisping, D ^a   Pucicki, D ^b   Hofling S ^a   Habermann, S ^c   Fischer, M ^c   Koeth, J ^c   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

Continuous Wave (CW) lasers; Gallium compounds; Lasers; Nitrogen compounds; Optical pumping; Quantum Well (QW) lasers; Semiconductor lasers

Indexed keywords

BROAD-AREA LASER DIODE; CHARACTERISTIC TEMPERATURE; CONTINUOUS WAVES; CONTINUOUS-WAVE (CW) LASERS; GAINNAS; GAINNAS LASERS; HIGH TEMPERATURE; HIGH TEMPERATURE PERFORMANCE; HIGH-POWER; HIGH-POWER OPERATION; INTERNAL LOSS; LARGE OPTICAL CAVITY LASERS; LASER DIODES; OUTPUT POWER; QUANTUM WELL; WAVEGUIDE DESIGN; WAVEGUIDE STRUCTURE; WAVELENGTH RANGES;

GALLIUM NITRIDE; LASERS; NITROGEN COMPOUNDS; OPTICAL PUMPING; OPTICALLY PUMPED LASERS; PUMPS; QUANTUM WELL LASERS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

CONTINUOUS WAVE LASERS;

EID: 67650839811     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2003414     Document Type: Article

References (9)

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