High-power 980 nm quantum dot broad area lasers

Electronics Letters

Volumn 39, Issue 23, 2003, Pages 1655-1657

  Sumpf, B ^a   Deubert, S ^b   Erbert, G ^a   Fricke, J ^a   Reithmaier, J P ^b   Forchel, A ^b   Staske, R ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HIGH POWER LASERS; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

ALUMINUM GALLIUM ARSENIDE; CONTINUOUS WAVE OUTPUT POWER; QUANTUM DOT BROAD AREA LASER; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0345412061     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031024     Document Type: Article

References (9)

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