16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure

Electronics Letters

Volumn 40, Issue 22, 2004, Pages 1413-1414

  Pikhtin, N A ^a   Slipchenko, S O ^a   Sokolova, Z N ^a   Stankevich, A L ^a   Vinokurov, D A ^a   Tarasov, I S ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTROMAGNETIC FIELDS; HETEROJUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; WAVEGUIDES;

CONTINUOUS-WAVE OUTPUT POWER; METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); OPTICAL POWER; WAVEGUIDE INFLUENCES;

SEMICONDUCTOR LASERS;

EID: 9144224424     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045885     Document Type: Article

References (6)

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