High-power laser diodes (λ = 808-850 nm) based on asymmetric separate-confinement heterostructures

Semiconductors

Volumn 40, Issue 5, 2006, Pages 611-614

  Andreev, A Yu ^b   Leshko, A Yu ^a   Lyutetski, A V ^a   Marmalyuk, A A ^b   Nalyot, T A ^a   Padalitsa, A A ^b   Pikhtin, N A ^a   Sabitov, D R ^b   Simakov, V A ^b   Slipchenko, S O ^b   Khomylev, M A ^a   Tarasov, I S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Sigm Plus Co   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646500781     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606050174     Document Type: Article

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