3D circuit model for 3D IC reliability study

2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009

Volumn , Issue , 2009, Pages

  Tan, Cher Ming ^a,b   He, Feifei ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

2-D MODEL; 3-D CIRCUIT MODEL; 3-D INTEGRATED CIRCUIT; 3D CIRCUIT; 3D MODELS; CIRCUIT LAYOUTS; CIRCUIT SIMULATORS; ELECTROMIGRATION FAILURES; EMERGING TECHNOLOGIES; FINITE ELEMENT; IC RELIABILITY; INTERCONNECT LAYERS; INTERCONNECT RELIABILITY; LAYOUT DESIGNS; MECHANICAL MODELING; OPERATING CONDITION; REAL CIRCUITS; SIMULATION RESULT; STRESS DISTRIBUTION; SURROUNDING MATERIALS; THERMAL EXPANSIVITY; THERMO-MECHANICAL STRESS; YOUNG MODULUS;

CIRCUIT SIMULATION; ELECTROMIGRATION; INTEGRATED CIRCUITS; MATERIALS PROPERTIES; MECHANICAL PROPERTIES; MICROELECTRONICS; MICROSYSTEMS; POISSON DISTRIBUTION; POISSON RATIO; RELIABILITY; SIMULATORS; STRESS CONCENTRATION; THERMAL CONDUCTIVITY; THERMOMECHANICAL TREATMENT;

THREE DIMENSIONAL;

EID: 67650562329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESIME.2009.4938513     Document Type: Conference Paper

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