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Volumn , Issue , 2004, Pages 177-186

The impact of technology scaling on lifetime reliability

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FAILURE (MECHANICAL); MATHEMATICAL MODELS; RELIABILITY; THERMAL CYCLING; TRANSISTORS;

EID: 4544227478     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/dsn.2004.1311888     Document Type: Conference Paper
Times cited : (451)

References (17)
  • 1
    • 84893381946 scopus 로고    scopus 로고
    • Failure mechanisms and models for semiconductor devices
    • Failure Mechanisms and Models for Semiconductor Devices. In JEDEC Publication JEP 122-A, 2002.
    • (2002) JEDEC Publication JEP 122-A
  • 2
    • 13944251955 scopus 로고    scopus 로고
    • Critical reliability challenges for the international technology roadmap for semiconductors
    • Critical Reliability Challenges for The International Technology Roadmap for Semiconductors. In Intl. Sematech Tech. Transfer 03024377A-TR, 2003.
    • (2003) Intl. Sematech Tech. Transfer 03024377A-TR
  • 3
    • 0032592096 scopus 로고    scopus 로고
    • Design challenges of technology scaling
    • Jul-Aug
    • S. Borkar. Design Challenges of Technology Scaling. In IEEE MICRO, Jul-Aug 1999.
    • (1999) IEEE MICRO
    • Borkar, S.1
  • 5
    • 0034316092 scopus 로고    scopus 로고
    • Power-aware microarchitecture: Design and modeling challenges for the next-generation microprocessor
    • D. Brooks et al. Power-aware Microarchitecture: Design and Modeling Challenges for the next-generation microprocessor. In IEEE Micro, 2000.
    • (2000) IEEE Micro
    • Brooks, D.1
  • 6
    • 84862434295 scopus 로고    scopus 로고
    • Integration of CVD W- and Ta-based lines for copper metallization
    • E. Eisenbraun et al. Integration of CVD W- and Ta-based Lines for Copper Metallization. In MKS white paper, http://www.mksinst.com/techpap.html, 2000.
    • (2000) MKS White Paper
    • Eisenbraun, E.1
  • 7
    • 1542269347 scopus 로고    scopus 로고
    • Reducing power density through activity migration
    • S. Heo et al. Reducing Power Density Through Activity Migration. In Intl. Symp. on Low Power Elec. Design, 2003.
    • (2003) Intl. Symp. on Low Power Elec. Design
    • Heo, S.1
  • 8
    • 4544326769 scopus 로고    scopus 로고
    • Scaling effect on electromigration in on-chip Cu wiring
    • C. K. Hu et al. Scaling Effect on Electromigration in On-Chip Cu Wiring. In International Electron Devices Meeting, 1999.
    • (1999) International Electron Devices Meeting
    • Hu, C.K.1
  • 10
    • 0036508455 scopus 로고    scopus 로고
    • Reliability limits for the gate insulator in CMOS technology
    • J.H.Stathis. Reliability Limits for the Gate Insulator in CMOS Technology. In IBM Journal of R&D, Vol. 46, 2002.
    • (2002) IBM Journal of R&D , vol.46
    • Stathis, J.H.1
  • 11
    • 4544256648 scopus 로고    scopus 로고
    • The POWER4 system microarchitecture
    • C.Moore. The POWER4 System Microarchitecture. In Microprocessor Forum, 2000.
    • (2000) Microprocessor Forum
    • Moore, C.1
  • 12
    • 84994353124 scopus 로고    scopus 로고
    • Validation of turandot, a fast processor model for microarchitectural exploration
    • M. Moudgill et al. Validation of turandot, a fast processor model for microarchitectural exploration. In IEEE Intl Perf., Computing, and Communications Conf., 1999.
    • (1999) IEEE Intl Perf., Computing, and Communications Conf.
    • Moudgill, M.1
  • 13
    • 0038310145 scopus 로고    scopus 로고
    • Leakage, breakdown, and TDDB characteristics of porous low-k silica based interconnect materials
    • E. T. Ogawa et al. Leakage, Breakdown, and TDDB Characteristics of porous low-k silica based interconnect materials. In International Reliability Physics Symposium, 2003.
    • (2003) International Reliability Physics Symposium
    • Ogawa, E.T.1
  • 17
    • 0036839166 scopus 로고    scopus 로고
    • Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate dioxides
    • E. Y. Wu et al. Interplay of Voltage and Temperature Acceleration of Oxide Breakdown for Ultra-Thin Gate Dioxides. In Solid-state Electronics Journal, 2002.
    • (2002) Solid-state Electronics Journal
    • Wu, E.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.