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Volumn 95, Issue 1, 2009, Pages

Electrical characterization of the soft breakdown failure mode in MgO layers

(9) Miranda, E a O'Connor, E b Cherkaoui, K b Monaghan, S b Long, R b O'Connell, D b Hurley, P K b Hughes, G c Casey, P c

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b UNIVERSITY COLLEGE CORK (Ireland)

c DUBLIN CITY UNIVERSITY (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CONSTANT VOLTAGE STRESS; CURRENT VOLTAGE; DEGRADATION DYNAMICS; DIELECTRIC LAYER; DIFFERENTIAL CONDUCTANCES; ELECTRICAL CHARACTERIZATION; POWER LAW MODEL; POWER-LAW TIME DEPENDENCES; PROGRESSIVE BREAKDOWN; SI SUBSTRATES; SOFT BREAKDOWN; VOLTAGE WINDOW;

CHARGE TRAPPING; ELECTRIC POTENTIAL; SILICON COMPOUNDS; WINDOWS;

FAILURE ANALYSIS;

EID: 67650480848 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3167827 Document Type: Article

Times cited : (8)

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