Gas sensing properties of zno nanowires

Transactions of the Indian Ceramic Society

Volumn 67, Issue 1, 2008, Pages 1-15

  Maity, A B ^a   Chaudhuri, S ^a,b  

^a HALDIA INSTITUTE OF TECHNOLOGY   (India)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Gas sensing mechanism; Gas sensors; ZnO nanowire

Indexed keywords

EID: 67650430600     PISSN: 0371750X     EISSN: 21655456     Source Type: Journal    
DOI: 10.1080/0371750X.2008.11078638     Document Type: Article

References (98)

1. D., Appell, Nature, 419, 553–55 (2002).
2. L., Samuelson, Mater. Today, 6, 22–31(2003).
3. X. F., Duan, Y., Huang, Y., Cui, J. F., Wang and C. M., Lieber, Nature, 409, 66–69 (2001).
4. Y., Cui, Q., Wei, H., Park and C. M., Lieber, Science, 293, 1289–92 (2001).
5. Y. N., Xia, P. D., Yang, Y. G., Sun, Y. Y., Wu, B., Mayers, B., Gates, Y. D., Yin, F., Kim and H. Q., Yan, Adv. Mater., 15, 353–58 (2003).
6. Z. L., Wang, Adv. Mater., 12, 1295–98 (2000).
7. J., Hu, T. W., Odom and C. M., Lieber, Acc. Chem. Res., 32, 435–39 (1999).
8. P. D., Yang and C. M., Lieber, Science, 273, 1836–40 (1996).
9. X. G., Peng, J., Wickham and A. P., Alivisatos, J. Am. Chem. Soc., 120, 5343–44 (1998).
10. T. J., Trentler, K. M., Hickman, S. C., Goel, A. M., Viano, P. C., Gibbons and W. E., Buhro, Science, 270, 1791–94 (1995).
11. C. C., Chen and C. C., Yeh, Adv. Mater., 12, 738–41 (2000).
12. J. Q., Hu, Q., Li, N. B., Wong, C. S., Lee and S. T., Lee, Chem. Mater., 14, 1216–19 (2002).
13. R. S., Wagner and W. C., Ellis, Appl. Phys. Lett., 4, 89–91 (1964).
14. A. I., Klimovskaya, I. P., Ostrovskii and A. S., Ostrovskaya, Phys. Stat. Solidi.(a), 153, 465–72 (1996).
15. O., Toshio and N., Masayuki, J. Cryst. Growth, 46, 504–509 (1979).
16. Y., Iwao and S. J., Hajime, J. Cryst. Growth, 45, 511–14 (1978).
17. D. P., Yu, X. S., Sun, C. S., Lee, I., Bello, S. T., Lee, H. D., Gu, K. M., Leung, G. W., Zhou, Z. F., Dong and Z., Zhang, Appl. Phys. Lett., 72, 1966–68 (1998).
18. X. F., Duan and C. M., Lieber, J. Am. Chem. Soc., 122, 188–89 (2000).
19. R. Q., Zhang, Y., Lifshitz and S. T., Lee, Adv. Mater., 15, 635–40 (2003).
20. W. Q., Han, S. S., Fan, Q. Q., Li and Y. D., Hu, Science, 277, 1287–89 (1997).
21. C. R., Wang, K. B., Tang, Q., Yang, B., Hai, G. Z., Shen, C. H., An, W. C., Yu and Y. T., Qian, Inorg. Chem. Comm., 4, 339–43 (2001).
22. Y., Jiang, Y., Wu, X., Mo, W. C., Yu, Y., Xie and Y. T., Qian, Inorg. Chem., 39, 2964–66 (2000).
23. C. R., Wang, K. B., Tang, Q., Yang and Y. T., Qian, J. Electrochem. Soc., 150, G163–G165 (2003).
24. M., Yazawa, M., Koguchi, A., Muto, M., Ozawa and K., Hiruma, Appl. Phys. Lett., 61, 2051–53 (1992).
25. H. S., Kang, J. S., Kang, J. W., Kim and S. Y., Lee, J. Appl. Phys., 95, 1246–48 (2004).
26. D. M., Bagnall, Y. F., Chen, M. Y., Shen, Z., Zhu, T., Goto and T., Yao, Appl. Phys. Lett., 70, 2230–32 (1997).
27. T., Aoki, Y., Hatanaka and D. C., Look, Appl. Phys. Lett., 76, 3257–59 (2000).
28. D. C., Look, Mater. Sci. Engg. B, 80, 383–87 (2001).
29. U., Ozgur, Y. I., Alivov, C., Liu, A., Teke, M. A., Reshchikov, S., Dogan, V., Avrutin, S. J., Cho and H., Morkoc, J. Appl. Phys., 98, 041301–1 to 98 (2005).
30. A. P., Chatterjee, P., Mitra and A. K., Mukhopadhyay, J. Mater. Sci., 34, 4225–27 (1999).
31. G. C., Yi, C., Wang and W. I., Park, Semicond. Sci. Tech., 20, S22–S34 (2005).
32. S., Iijima, Nature, 354, 56–58 (1991).
33. A. M., Morales and C. M., Lieber, Science, 279, 208–211 (1998).
34. Y. B., Li, Y., Bando, T., Sato and K., Kurashima, Appl. Phys. Lett., 81, 144–46 (2002).
35. H. T., Wang, B. S., Kang, F., Ren, L. C., Tien, P. W., Sadik, D. P., Norton, S. J., Pearton and J., Lin, Appl. Phys. Lett., 86, 243503–1 to 3 (2005).
36. Q., Wan, Q. H., Li, Y. J., Chen, T. H., Wang, X. L., He, J. P., Li and C. L., Lin, Appl. Phys. Lett., 84, 3654–56 (2004).
37. A., Chowdhuri, V., Gupta and K., Sreenivas, IEEE Sensors J., 3, 680–86 (2003).
38. M. H., Huang, S., Mao, H., Feick, H., Yan, Y., Wu, H., Kind, E., Weber, R., Russo and P., Yang, Science, 292, 1897–99 (2001).
39. H. T., Ng, J., Han, T., Yamada, P., Nguyen, Y. P., Chain and M., Meyyappan, Nano Lett., 4, 1247–52 (2004).
40. X. D., Bai, P. X., Gao, Z. L., Wang and E. G., Wang, Appl. Phys. Lett., 82, 4806–4808 (2003).
41. X., Wang, J., Song, P., Li, J. H., Ryou, R. D., Dupuis, C. J., Summers and Z. L., Wang, J. Am. Chem. Soc., 127, 7920–23 (2005).
42. P. X., Gao, Y., Ding and Z. L., Wang, Nano Lett., 3, 1315–20 (2003).
43. C. J., Lee, T. J., Lee, S. C., Lyu, Y., Zhang, R., Ruh and H. J., Lee, Appl. Phys. Lett., 81, 3648–50 (2002).
44. S. C., Lyu, Y., Zhang, C. J., Lee, H., Ruh and H. J., Lee, Chem. Mater., 15, 3294–99 (2003).
45. T. W., Kim, T., Kawazoe, S., Yamazaki, M., Ohtsu and T., Sekiguchi, Appl. Phys. Lett., 84, 3358–50 (2004).
46. B. D., Yao, Y. F., Chan and N., Wang, Appl. Phys. Lett., 81, 757–59 (2002).
47. L., Wang, X., Zhang, S., Zhao, G., Zhou, Y., Zhou and J., Qi, Appl. Phys. Lett., 86, 024108–1 to 3 (2005).
48. J. Y., Lao, J. Y., Huang, D. Z., Wang and Z. F., Ren, Nano Lett., 3, 235–38 (2003).
49. S., Kar, B. N., Pal, S., Chaudhuri and D., Chakravorty, J. Phys. Chem. B, 110, 4605–11 (2006).
50. A., Dev, S., Kar, S., Chakrabarti and S., Chaudhuri, Nanotechnology, 17, 1533–39 (2006).
51. Y. W., Heo, V., Varadarajan, M., Kaufman, K., Kim, D. P., Norton, F., Ren and P. H., Fleming, Appl. Phys. Lett., 81, 3046–48 (2002).
52. Q., Wan, C. L., Lin, X. B., Yu and T. H., Wang, Appl. Phys. Lett., 84, 124–26 (2004).
53. S. Y., Li, P., Lin, C. Y., Lee and T. Y., Tseng, J. Appl. Phys., 95, 3711–16 (2004).
54. Q., Li, V., Kumar, Y., Li, H., Zhang, T. J., Marks and R. P. H., Chang, Chem. Mater., 17, 1001–1006 (2005).
55. H., Yu, Z., Jhang, M., Han, X., Hao and F., Zhu, J. Am. Chem. Soc., 127, 2378–79 (2005).
56. J. W. P., Hsu, Z. R., Tian, N. C., Simmons, C. M., Matzke, J. A., Voigt and J., Liu, Nano Lett., 5, 83–86 (2005).
57. P., Yang, H., Yan, S., Mao, R., Russo, J., Johnson, R., Saykally, N., Morris, J., Pham, R., He and H., Choi, Adv. Func. Mater., 12, 323–31 (2002).
58. N., Yamazoe, Sensors and Actuators B, 108, 2–14 (2005).
59. B., Timmer, W., Olthuis and A., van den Berg, Sensors and Actuators B, 107, 666–77 (2005).
60. D., Kohl, J. Phys. D.:Appl. Phys., 34, R125–R149 (2001).
61. J., Riegel, H., Neumann and H. M., Wiedenmann, Solid State Ionics, 152/153, 783–800 (2002).
62. A., Dubbe, Sensors and Actuators B, 88, 138–48 (2003).
63. S., Matushima, T., Maekawa, J., Tamaki, N., Miura and N., Yamazoe, Chem. Lett., 5, 845–47 (1989).
64. T., Maekawa, Y., Anno, J., Tamaki, N., Miura, N., Yamazoe, Y., Asano and K., Hayashi, Sensors and Actuators B, 13/14, 713–15 (1993).
65. R. K., Srivastava, P., Lal, R., Dwivedi and S. K., Srivastava, Sensors and Actuators B, 21, 213–18 (1994).
66. H. P., Huebner and S., Drost, Sensors and Actuators B, 4, 463–65 (1991).
67. J., Mizsei, Sensors and Actuators B, 23, 173–76 (1995).
68. A., Jerger, H., Kohler, F., Becker, H. B., Keller and R., Seifert, Sensors and Actuators B, 81, 301–307 (2002).
69. Y. D., Wang, X. H., Wu, Q., Su, Y. F., Li and Z. L., Zhou, Solid State Electron., 45, 347–50 (2001).
70. W., Goepel and K. D., Schierbaum, Sensors and Actuators B, 26/27, 1–12 (1995).
71. A., Kolmakov, Y. X., Zhang, G. S., Cheng and M., Moskovits, Adv. Mater., 15, 997–1000 (2003).
72. M., Law, H., Kind, F., Kim, B., Messer and P., Yang, Ang. Chem. Int. Ed., 41, 2405–2407 (2002).
73. E., Comini, G., Faglia, G., Sberveglieri, Z., Pan and Z. L., Wang, Appl. Phys. Lett., 81, 1869–71 (2002).
74. C., Li, D., Zhang, X., Liu, S., Han, T., Tang, J., Han and C Zhou, Appl. Phys. Lett., 82, 1613–15 (2003).
75. Z., Fan, D., Wang, P. C., Chang, W. Y., Tseng and J. G., Lu, Appl. Phys. Lett., 85, 5923–25 (2004).
76. Z. P., Sun, L., Liu, L., Zhang and D. Z., Jia, Nanotechnology, 17, 2266–70 (2006).
77. Z., Fan and J. G., Lu, Appl. Phys. Lett., 86, 123510–1 to 3 (2005).
78. Q. H., Li, Y. X., Liang, Q., Wan and T. H., Wang, Appl. Phys. Lett., 85, 6389–91 (2004).
79. Z., Fan and J. G., Lu, pp. 403–406 in:Proc. 5th IEEE Conf. on Nanotechnology, Vol. 1, Nagoya, Japan (2005).
80. X., Jiaqiang, C., Yuping, C., Daoyong and S., Jianian, Sensors and Actuators B, 113, 526–31 (2006).
81. S., Chakrabarti, D., Ganguli and S., Chaudhuri, Phys. Stat. Solidi.(a), 201, 2134–37 (2004).
82. A. B., Maity and S., Chaudhuri, pp. 222–25 in:The Physics of Semiconductor Devices, Vol. I, Eds. Kumar, Agarwal and Singh, Allied Publishers, New Delhi, India (2005).
83. G., Tournier, C., Pijolat, R., Lalauze and B., Patissier, Sensors and Actuators B, 26, 24–28 (1995).
84. S., Shukla, S., Seal, L., Ludwig and C., Parish, Sensors and Actuators B, 97, 256–65 (2004).
85. Q. H., Li, T., Gao, Y. G., Wang and T. H., Wang, Appl. Phys. Lett., 86, 123117–1 to 3 (2005).
86. A., Trinchi, Y. X., Li, W., Wlodarski, S., Kaciulis, L., Pandolfi, S. P., Russo, J., Duplessis and S., Viticoli, Sensors and Actuators A, 108, 263–70 (2003).
87. P. T., Mosley, Sensors and Actuators B, 6, 149–53 (1992).
88. G. W., Hunter, P. G., Neudeck, R. S., Okojie, G. M., Behein, V., Thomas, L., Chen, D., Lukco, C. C., Liu, B., Ward and D., Makel, Proc. Electrochem. Soc., 114, 93–95 (2002).
89. I., Sayago, E., Terrado, E., Lafuente, M. C., Horillo, W. K., Maser, A. M., Benito, R., Navarro, E. P., Urriolabeita, M. T., Martinez and J., Gutierrez, Synth. Mater., 148, 15–17 (2005).
90. Y., Lu, J., Li, H. T., Ng, C., Binder, C., Partridge and M., Meyyapan, Chem. Phys. Lett., 391, 344–46 (2004).
91. L. G., Close, F. I., Catlin and A. M., Cohn, Arch. Otolaryngol, 106, 151–58 (1980).
92. C. M., Leung and C. L., Foo, Ann. Acad. Med. Singapore, 21, 624–29 (1992).
93. O., Lang, C., Pettenkofer, J. F., Sanchez-Royo, A., Segura, A., Klein and W., Jaegermann, J. Appl. Phys., 86, 5687–91 (1999).
94. V. E., Henrich and P. A., Cox, The Surface Science of Metal Oxides, Cambridge University Press, UK (1994).
95. Y. K., Fang and J. J., Lee, Thin Solid Film, 169, 51–56 (1989).
96. J., Tamaki, T., Matsubhuima, N., Muira and Y., Yamazoe, Chem. Lett., 3, 477–79 (1990).
97. B. B., Rao, Mater. Chem. Phys., 64, 62–65 (2000).
98. X. Y., Xue, Y. J., Chen, Y. G., Wang and T. H., Wang, Appl. Phys. Lett., 86, 233101–1 to 3 (2005).