A general low-temperature route for large-scale fabrication of highly oriented ZnO nanorod/nanotube arrays

Journal of the American Chemical Society

Volumn 127, Issue 8, 2005, Pages 2378-2379

  Yu, Haidong ^a   Zhang, Zhongping ^a   Han, Mingyong ^a   Hao, Xiaotao ^a   Zhu, Furong ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTUBE; ZINC OXIDE;

ARTICLE; CHEMICAL MODIFICATION; LOW TEMPERATURE PROCEDURES; SEMICONDUCTOR; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

EID: 14744279793     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja043121y     Document Type: Article

References (23)

1. Huang, M. H.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292, 1897.
2. Ohta, H.; Hosono, H. Mater. Today 2004, 42.
3. Dai, Z. R.; Pan, Z. W.; Wang, Z. L. Adv. Funct. Mater. 2003, 13, 9.
4. (a) Chia, C. H.; Makino, T.; Tamura, K.; Segawa, Y.; Kawasaki, M.; Ohtomo, A.; Koinuma, H. Appl. Phys. Lett. 2003, 82, 1848.
5. (b) Park, W. I.; Yi, G. C.; Kim, M.; Pennycook, S. J. Adv. Mater. 2002, 14, 1841.
6. (c) Yang, P.; Yan, H.; Mao, S.; Russo, R.; Johnson, J.; Saykally, R.; Morris, N.; Pham, J.; He, R.; Choi, H. Adv. Funct. Mater. 2002, 12, 323.
7. (d) Yao, B. D.; Chan, Y. F.; Wang, N. Appl. Phys. Lett. 2002, 81, 757.
8. (a) Liu, B.; Zeng, H. C. Langmuir 2004, 20, 4196.
9. (b) Liu, B.; Zeng, H. C. J. Am. Chem. Soc. 2003, 125, 4430.
10. (c) Pacholski, C.; Kornowski, A.; Weller, H. Angew. Chem., Int. Ed. 2002, 41, 1188.
11. (d) Guo, L.; Ji, Y. L.; Xu, H.; Simon, P.; Wu, Z. J. Am. Chem. Soc. 2002, 124, 14864.
12. (e) Zhang, J.; Sun, L. D.; Yin, J. L.; Su, H. L.; Liao, C. S.; Yan, C. H. Chem. Mater. 2002, 14, 4172.
13. (f) Feng, X.; Feng, L.; Jin, M.; Zhai, J.; Jiang, L.; Zhu, D. J. Am. Chem. Soc. 2004, 126, 62.
14. (g) Vayssieres, L.; Keis, K.; Lindquist, S.-E.; Hagfeldt, A. J. Phys. Chem. B 2001, 105, 3350.
15. (a) Tian, Z. R.; Voigt, J. A.; Liu, J.; Mckenzie, B.; Mcdermott, M. J.; Rodriguez, M. A.; Konishi, H.; Xu, H. Nat. Mater. 2003, 2, 821.
16. (b) Greene, L. E.; Law, M.; Goldberger, J.; Kim, F.; Johson, J. C.; Zhang, Y.; Saykally, R. J.; Yang, P. Angew. Chem., Int. Ed. 2003, 42, 3031.
17. (c) Peterson, R. B.; Fields, C. L.; Gregg, B. A. Langmuir 2004, 20, 5114.
18. Choy, J. H.; Jang, E. S.; Won, J. Chung, J. H.; Jang, D. J.; Kim, Y. W. Adv. Mater. 2003, 15, 1911.
19. (a) Amrani, B.; Hamzaoui, S. Catal. Today 2004, 89, 331.
20. (b) Hao, X. T.; Ma, J.; Zhang, D. H.; Yang, Y. G.; Ma, H. L.; Cheng, C. F.; Liu, X. D. Mater. Sci. Eng. B 2002, 90, 50.
21. The oxidation of metal zinc by naturally dissolved oxygen is very slow in water due to the surface-passivated oxide layer. However, in the presence of formamide, the spontaneous atmospheric oxidation process can be accelerated at room temperature to release zinc ions into reaction solution through the formation of zinc-formamide complexes. More zinc-formamide complexes can be supplied continuously at an elevated temperature. At an optimized temperature of 65 °C in 5% formamide aqueous solution, high-quality ZnO nanoarrays can be produced readily by this simple chemical-liquid-deposition approach during a period of 24 h of reaction. In the temporal evolution of zinc oxidation, zinc concentration increased proportionally with reaction time due to the continuous release of zinc ions into solution, and Zn complexes can be accumulated up to 0.46 mM gradually after 24 h in our preparation system. Freshly produced Zn ions can be supplied continuously for the subsequent crystal growth of nanorods on the seed particles through the thermal decomposition of the resulting zinc-formamide complexes.
22. Bakkers, E. P. A. M.; Verheijen, M. A. J. Am. Chem. Soc. 2003, 125, 3440.
23. Vayssieres, L.; Keis, K.; Hagfeldt, A.; Lindquist, S. E. Chem. Mater. 2001, 13, 4395.