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Volumn 45, Issue 2, 2001, Pages 347-350

Ammonia-sensing characteristics of Pt and SiO2 doped SnO2 materials

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DOPING (ADDITIVES); INFRARED RADIATION; PLATINUM; TIN COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

EID: 0035247189     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00231-8     Document Type: Article
Times cited : (141)

References (13)
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    • (1991) Sen Actu B 5 , vol.14 , pp. 7-19
    • Yamazoe, N.1
  • 2
    • 0004083819 scopus 로고
    • Gas sensors: Principles
    • editor. Dordrecht: Kluwer
    • Sbervelieri G, editor. Gas sensors: principles. Operation developments. Dordrecht: Kluwer; 1992.
    • (1992) Operation Developments
    • Sbervelieri, G.1
  • 3
    • 36849103543 scopus 로고
    • Activated tungsten oxide gas detectors
    • Shaver P.J. Activated tungsten oxide gas detectors. Appl Phys Lett. 11(8):1967;255-257.
    • (1967) Appl Phys Lett , vol.11 , Issue.8 , pp. 255-257
    • Shaver, P.J.1
  • 4
    • 85031525871 scopus 로고    scopus 로고
    • Japan Patent 43-28560, 1967
    • Loh JC. Japan Patent 43-28560, 1967.
    • Loh, J.C.1
  • 8
    • 0024872778 scopus 로고
    • 2-x thin film with added Pt fabricated by the dipping method
    • 2-x thin film with added Pt fabricated by the dipping method. Sen Actu. 20(3):1989;301-305.
    • (1989) Sen Actu , vol.20 , Issue.3 , pp. 301-305
    • Lee, D.D.1    Chung, W.T.2
  • 11
    • 0026436445 scopus 로고
    • Material selection for semiconductor gas sensors
    • Moseley P.T. Material selection for semiconductor gas sensors. Sen Actu B. 6(1-3):1992;149-156.
    • (1992) Sen Actu B , vol.6 , Issue.13 , pp. 149-156
    • Moseley, P.T.1
  • 13
    • 36549102472 scopus 로고    scopus 로고
    • The effect of microstructure on the height of potential energy barriers in porous tin dioxide gas sensors
    • Romppainen P., Lantto V. The effect of microstructure on the height of potential energy barriers in porous tin dioxide gas sensors. J Appl Phys. 63(10):1998;5159-5165.
    • (1998) J Appl Phys , vol.63 , Issue.10 , pp. 5159-5165
    • Romppainen, P.1    Lantto, V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.