Crystallization of sputtered-deposited and ion implanted amorphous Ge 2Sb2Te5 thin films

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Rimini, E ^a   De Bastiani, R ^a   Carria, E ^a   Grimaldi, M G ^a   Nicotra, G ^b   Bongiorno, C ^b   Spinella, C ^b  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SAMPLES; BULK VALUE; CRYSTAL TRANSITION; CRYSTALLINE FRACTIONS; CRYSTALLINE NUCLEI; CRYSTALLIZATION RATES; DEPOSITED FILMS; EVOLUTION OF THE MICROSTRUCTURE; FACE-CENTERED-CUBIC (FCC) CRYSTALS; FILM SURFACES; INITIAL STAGES; ION IMPLANTED; ION IRRADIATION; ISOTHERMAL CRYSTALLIZATION; LATTICE PARAMETERS; VERTICAL SHRINKAGE;

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; CRYSTALLIZATION; FILM GROWTH; GERMANIUM; IONS; IRRADIATION; NUCLEATION; TELLURIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL MODIFICATION;

EID: 67650224422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148288     Document Type: Conference Paper

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