|
Volumn 266, Issue 10, 2008, Pages 2511-2514
|
Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
|
Author keywords
Chalcogenides; Defects; Ion irradiation; RBS; Reflectivity; Stability
|
Indexed keywords
AMORPHOUS FILMS;
CRYSTALLIZATION KINETICS;
FREE ENERGY;
ION BOMBARDMENT;
PHASE CHANGE MEMORY;
SEMICONDUCTING GERMANIUM COMPOUNDS;
THERMODYNAMIC STABILITY;
DAMAGE ACCUMULATION;
ION BEAM IRRADIATION;
TIME RESOLVED REFLECTIVITY (TRR);
THIN FILMS;
|
EID: 44449090890
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2008.03.037 Document Type: Article |
Times cited : (20)
|
References (10)
|