High temperature operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Nomura, Takehiko ^a   Kambayashi, Hiroshi ^a   Masuda, Mitsuru ^a   Ishii, Sonomi ^a   Ikeda, Nariaki ^a   Jiang, Lee ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; MICROFABRICATION;

HIGH BREAKDOWN VOLTAGE; ON-STATE RESISTANCE; SWITCHING CAPACITY; SWITCHING CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 34247499987     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Yoshida, J. Li, T. Wada and H. Takehara, "High-Power AlGaN/GaN HFET with a Lower On-state Resistance and a Higher Switching Time for an Inverter Circuit", in Proc. 15th ISPSD, pp.58-61, (2003)
2. S. Yoshida and H.Ishii, "A high power GaN-based field effect transistor for large current operation", Physica.Status.Soidil.(a), Vol188, 243,(2001)
3. R.Vetury, N.Q.Zhang, S.Keller and U.K.Mishra, "The Impact of Surface State on the DC and RF Characteristics of AlGaN/GaN HFETs", IEEE Trans. Electron Device, 48, 560 (2001)