-
1
-
-
85068249445
-
-
We use atomic units throughout this article unless otherwise noted. In these units, energy is measured in Hartree and h=e=me=4πεo =1;εo is the permittivity of vacuum
-
o is the permittivity of vacuum.
-
-
-
-
2
-
-
77956664645
-
-
The self-energy G is related to G via Dyson's equation; see Section II.14, Eq. (2.5).
-
The self-energy G is related to G via Dyson's equation; see Section II.14, Eq. (2.5).
-
-
-
-
4
-
-
22144469121
-
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Seitz F., Turnbull D., and Ehrenreich H. (Eds), Academic, New York
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Godby, R.W.1
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11
-
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77956684317
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G.D. Mahan E.W. Plummer to appear in Handbook of Surfaces, 2, K. Horn and M. Scheffler.
-
G.D. Mahan E.W. Plummer to appear in Handbook of Surfaces, vol. 2, K. Horn and M. Scheffler.
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12
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0003927244
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to be published in, N. H. March World Scientific/Imperial College Press, London, UK
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B. Farid to be published in Electron Correlation in the Solid State, N. H. March World Scientific/Imperial College Press, London, UK.
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Electron Correlation in the Solid State
-
-
Farid, B.1
-
15
-
-
77956701059
-
-
We call basis sets that contain functions explicitly centered at atomic sites e.g, LMTO, Gaussian orbitals, etc, local-orbital basis sets in this article
-
We call basis sets that contain functions explicitly centered at atomic sites (e.g., LMTO, Gaussian orbitals, etc.) local-orbital basis sets in this article.
-
-
-
-
16
-
-
77956654711
-
-
The self-energy equals the energy of the bare particle interacting with itself via the polarization cloud that the particle generates in the many-body system
-
The self-energy equals the energy of the bare particle interacting with itself via the polarization cloud that the particle generates in the many-body system.
-
-
-
-
23
-
-
77956697503
-
-
Ψ(rt) destroys an electron at point r and time t
-
Ψ(rt) destroys an electron at point r and time t.
-
-
-
-
24
-
-
77956672536
-
-
Quasiparticle lifetimes in Si are discussed in connection with Fig. 15.
-
Quasiparticle lifetimes in Si are discussed in connection with Fig. 15.
-
-
-
-
25
-
-
77956659504
-
-
Typical values of Z for semiconductors are listed in Table 9.
-
Typical values of Z for semiconductors are listed in Table 9.
-
-
-
-
31
-
-
77956685907
-
-
Other independent-particle Hamiltonians such as Hartree and Hartree-Fock or empirical pseudopotential Hamiltonians have been used as well but to a much lesser extent. See, for instance, Sections II.7 and II.9
-
Other independent-particle Hamiltonians such as Hartree and Hartree-Fock or empirical pseudopotential Hamiltonians have been used as well but to a much lesser extent. See, for instance, Sections II.7 and II.9.
-
-
-
-
34
-
-
77956663063
-
-
See the appendix for a brief review of the Kohn-Sham theory and other important concepts of density functional theory
-
See the appendix for a brief review of the Kohn-Sham theory and other important concepts of density functional theory.
-
-
-
-
35
-
-
77956692057
-
-
In a crystalline system, i stands for the combination of a band index n, a spin index s, and a wave vector k
-
In a crystalline system, i stands for the combination of a band index n, a spin index s, and a wave vector k.
-
-
-
-
37
-
-
77956673176
-
-
For a formal expression of the exchange-correlation potential, see, for instance, and references therein
-
For a formal expression of the exchange-correlation potential, see, for instance, and references therein.
-
-
-
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39
-
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0003451211
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Lundqvist S., and March N.H. (Eds), Plenum Press, New York and London
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In: Lundqvist S., and March N.H. (Eds). Theory of the Inhomogeneous Electron Gas (1983), Plenum Press, New York and London
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Theory of the Inhomogeneous Electron Gas
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-
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42
-
-
77956686532
-
-
For a more detailed description, see the appendix
-
For a more detailed description, see the appendix.
-
-
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43
-
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77956667827
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W.G. Aulbur J.W. Wilkins unpublished.
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W.G. Aulbur J.W. Wilkins unpublished.
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77956689661
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For a discussion of the experimental value of 12.5 eV, see Section III. 18a.
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For a discussion of the experimental value of 12.5 eV, see Section III. 18a.
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77956684316
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For a discussion of vertex corrections see also
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For a discussion of vertex corrections see also
-
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250
-
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77956686548
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In the case of bulk Si, Gaussian-orbital-based calculations take as much time as plane-wave-based calculations (Ref. 284, For the Si(001, 2 x 1) reconstructed surface, a speed-up of a factor of five compared to plane waves is achieved Ref. 284
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In the case of bulk Si, Gaussian-orbital-based calculations take as much time as plane-wave-based calculations (Ref. 284). For the Si(001) (2 x 1) reconstructed surface, a speed-up of a factor of five compared to plane waves is achieved (Ref. 284).
-
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258
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77956672199
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M. Rohlfing diploma thesis, University of Münster, Gernany 1993
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M. Rohlfing diploma thesis, University of Münster, Gernany 1993
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267
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77956675182
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Note that fitting schemes for convergence plots are not unique, as discussed, for example, in (see Fig. 3 and discussion thereof).
-
Note that fitting schemes for convergence plots are not unique, as discussed, for example, in (see Fig. 3 and discussion thereof).
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77956654124
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cut =25 Hartrees for pseudopotentials with hardness conservation.
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cut =25 Hartrees for pseudopotentials with hardness conservation.
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284
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Nauka Leningrad
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Ref. 341, as presented by
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as presented in Ref. 44.
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For a review, see, for instance
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For a review, see, for instance
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sV(x, y, z)dxdy (S is the in-plane area of the surface unit cell), an additional running average over the extension of a unit cell in the growth direction (z) is performed. With a as the lattice constant in the z direction, one defines {A figure is presented}, which reduces to a constant in the bulk and shows a smooth transition at the interface. For a discussion of these kinds of averages, see, for instance.
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sV(x, y, z)dxdy (S is the in-plane area of the surface unit cell), an additional "running" average over the extension of a unit cell in the growth direction (z) is performed. With a as the lattice constant in the z direction, one defines {A figure is presented}, which reduces to a constant in the bulk and shows a smooth transition at the interface. For a discussion of these kinds of averages, see, for instance.
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