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Volumn 54, Issue C, 2000, Pages 1-218

Quasiparticle Calculations in Solids

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EID: 0012050648     PISSN: 00811947     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0081-1947(08)60248-9     Document Type: Chapter
Times cited : (744)

References (627)
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    • We use atomic units throughout this article unless otherwise noted. In these units, energy is measured in Hartree and h=e=me=4πεo =1;εo is the permittivity of vacuum
    • o is the permittivity of vacuum.
  • 2
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    • The self-energy G is related to G via Dyson's equation; see Section II.14, Eq. (2.5).
    • The self-energy G is related to G via Dyson's equation; see Section II.14, Eq. (2.5).
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    • We call basis sets that contain functions explicitly centered at atomic sites e.g, LMTO, Gaussian orbitals, etc, local-orbital basis sets in this article
    • We call basis sets that contain functions explicitly centered at atomic sites (e.g., LMTO, Gaussian orbitals, etc.) local-orbital basis sets in this article.
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    • The self-energy equals the energy of the bare particle interacting with itself via the polarization cloud that the particle generates in the many-body system
    • The self-energy equals the energy of the bare particle interacting with itself via the polarization cloud that the particle generates in the many-body system.
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    • Ψ(rt) destroys an electron at point r and time t
    • Ψ(rt) destroys an electron at point r and time t.
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    • Quasiparticle lifetimes in Si are discussed in connection with Fig. 15.
    • Quasiparticle lifetimes in Si are discussed in connection with Fig. 15.
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    • Typical values of Z for semiconductors are listed in Table 9.
    • Typical values of Z for semiconductors are listed in Table 9.
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    • Other independent-particle Hamiltonians such as Hartree and Hartree-Fock or empirical pseudopotential Hamiltonians have been used as well but to a much lesser extent. See, for instance, Sections II.7 and II.9
    • Other independent-particle Hamiltonians such as Hartree and Hartree-Fock or empirical pseudopotential Hamiltonians have been used as well but to a much lesser extent. See, for instance, Sections II.7 and II.9.
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    • See the appendix for a brief review of the Kohn-Sham theory and other important concepts of density functional theory.
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    • In a crystalline system, i stands for the combination of a band index n, a spin index s, and a wave vector k
    • In a crystalline system, i stands for the combination of a band index n, a spin index s, and a wave vector k.
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    • For a formal expression of the exchange-correlation potential, see, for instance, and references therein
    • For a formal expression of the exchange-correlation potential, see, for instance, and references therein.
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    • For a more detailed description, see the appendix
    • For a more detailed description, see the appendix.
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    • For a discussion of the experimental value of 12.5 eV, see Section III. 18a.
    • For a discussion of the experimental value of 12.5 eV, see Section III. 18a.
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    • For a discussion of vertex corrections see also
    • For a discussion of vertex corrections see also
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    • Note that fitting schemes for convergence plots are not unique, as discussed, for example, in (see Fig. 3 and discussion thereof).
    • Note that fitting schemes for convergence plots are not unique, as discussed, for example, in (see Fig. 3 and discussion thereof).
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    • cut =25 Hartrees for pseudopotentials with hardness conservation.
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    • Ref. 341, as presented by
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    • as presented in Ref. 44.
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    • sV(x, y, z)dxdy (S is the in-plane area of the surface unit cell), an additional "running" average over the extension of a unit cell in the growth direction (z) is performed. With a as the lattice constant in the z direction, one defines {A figure is presented}, which reduces to a constant in the bulk and shows a smooth transition at the interface. For a discussion of these kinds of averages, see, for instance.
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