Structural and electrical properties of K0.5Bi 0.5TiO3 thin films for ferroelectric field effect transistor applications

Journal of Physics D: Applied Physics

Volumn 42, Issue 4, 2009, Pages

  Jing, Xiangyang ^a   Huang, Baibiao ^a   Zhang, Xiaoyang ^a   Qin, Xiaoyan ^a   Wei, Jiyong ^a   Wang, Xiaoning ^a   Yao, Shushan ^a   Xu, Zhenhua ^a   Wang, Zeyan ^a   Wang, Peng ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM IMAGE; CAPACITANCE VOLTAGE; ELECTRICAL MEASUREMENT; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC POLARIZATION; GRAIN SIZE; INSULATING PROPERTIES; INTERFACIAL LAYER; MEMORY WINDOW; METALFERROELECTRIC-SEMICONDUCTOR; METALORGANIC DECOMPOSITION METHOD; PEROVSKITE THIN FILMS; SI SUBSTRATES; SI(1 0 0); STRUCTURAL AND ELECTRICAL PROPERTIES; TIO; TRAPPED CHARGE; X-RAY PATTERNS;

CAPACITANCE; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HYSTERESIS; HYSTERESIS LOOPS; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS;

FERROELECTRIC FILMS;

EID: 67650075354     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/4/045421     Document Type: Article

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