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Advanced Materials

Volumn 17, Issue 4, 2005, Pages 491-494

Enhanced ferroelectric properties of nitrogen-doped Bi4Ti 3O12 thin films

(4) Irie, Hiroshi a Saito, Hiroyuki a Ohkoshi, Shin Ichi a Hashimoto, Kazuhito a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; LEAKAGE CURRENTS; NITROGEN; POLARIZATION; SPUTTERING; STOICHIOMETRY;

BISMUTH LAYER-STRUCTURED OXIDE (BLSO); DOMAIN MOTIONS; FERROELECTRIC RANDOM-ACCESS MEMORIES (FERAM); N-TYPE SEMICONDUCTOR;

FERROELECTRIC THIN FILMS;

EID: 14844321983 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200400957 Document Type: Article

Times cited : (42)

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